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MITSUBISHI KD421K10 New IGBT Module

#MITSUBISHI, #KD421K10, #IGBT_Module, #IGBT, KD421K10 Power Bipolar Transistor, 100A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon; KD421K10

· Categories: IGBT Module
· Manufacturer: MITSUBISHI
· Price: US$
· Date Code: 11+
. Available Qty: 35
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KD421K10 Specification

Sell KD421K10, #MITSUBISHI #KD421K10 New Stock, KD421K10 Power Bipolar Transistor, 100A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon; KD421K10, #IGBT_Module, #IGBT, #KD421K10
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/kd421k10.html

Manufacturer Part Number: KD421K10Part Life Cycle Code: ObsoleteIhs Manufacturer: Powerex INCPackage Description: FLANGE MOUNT, R-XUFM-X15Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.82Case Connection: ISOLATEDCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 1000 VConfiguration: COMPLEXDC Current Gain-Min (hFE): 100Fall Time-Max (tf): 3000 nsJESD-30 Code: R-XUFM-X15Number of Elements: 2Number of Terminals: 15Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 800 WQualification Status: Not QualifiedRise Time-Max (tr): 3000 nsSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICONVCEsat-Max: 2.5 V Power Bipolar Transistor, 100A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon

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