#HITACHI, #MBM300GR12, #IGBT_Module, #IGBT, MBM300GR12 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES; MBM300GR12
Manufacturer Part Number: MBM300GR12Part Life Cycle Code: TransferredIhs Manufacturer: Hitachi LTDPackage Description: FLANGE MOUNT, R-PUFM-X7Manufacturer: Hitachi LtdRisk Rank: 5.14Collector Current-Max (IC): 300 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-X7Number of Elements: 1Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPower Dissipation-Max (Abs): 1710 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERVCEsat-Max: 2.8 V Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES