HITACHI MBN1200GS12AW IGBT Module

Manufacturer Part Number: MBN1200GS12AWPart Life Cycle Code: TransferredIhs Manufacturer: Hitachi LTDPackage Description: FLANGE MOUNT, R-PUFM-X4Manufacturer: Hitachi LtdRisk Rank: 5.19Collector Current-Max (IC): 1200 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPower Dissipation-Max (Abs): 5600 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERVCEsat-Max: 3.6 V Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES