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HITACHI MBN600GR12

  • MBN600GR12
  • MBN600GR12 Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES; MBN600GR12

    · Categories: IGBT
    · Manufacturer: HITACHI
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 154
    MOQ: 1 PC
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    Content last revised on May 18, 2023

    Manufacturer Part Number: MBN600GR12Part Life Cycle Code: TransferredIhs Manufacturer: Hitachi LTDPackage Description: FLANGE MOUNT, R-PUFM-X4Manufacturer: Hitachi LtdRisk Rank: 5.14Collector Current-Max (IC): 600 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPower Dissipation-Max (Abs): 3570 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERVCEsat-Max: 2.8 V Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES