Content last revised on November 1, 2024
MG200Q1US1 Description
GTR Module: Silicon N-Channel IGBT; 200 Amp; 1200 Volt
MG200Q1US1 0.74 lbs
Target_Applications
MG200Q1US1 could be used in High Power Switching / Motor Control Applications
High Input Impedance
High Speed : tf=0.5μs (Max.) trr=0.5μs (Max.)
Low Saturation Voltage:VCE(sat)=4.0V (Max.)
Enhancement-Mode
The Electrodes are Isolated from Case.
Maximum ratings(Tc=25°C )
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :200A
Collector current Icp 1ms Tc=25°C :400A
Collector power dissipation Pc:1400W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque M4/M6 2/3 N·m
