MG300Q1US1 Description
MG300Q1US1, V(ces): 1200V V(ges): 20V 2000W insulated gate bipolar transistor. For high power switching and motor control applications
MG300Q1US1 1.10 lbs
Target_Applications
MG300Q1US1 could be used in High Power Switching / Motor Control Applications
Features
N Channel IGBT (High Power Switching / Motor Control Applications) 1IGBT: 300A1200V
