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Toshiba MG30G6EL2

MG30G6EL2 Toshiba GTR Module Silicon NPN triple diffused type 6GTR: 30A 450V

· Categories: IGBT
· Manufacturer: Toshiba
· Price: US$ 35 In-Stock Offer
· Date Code: Please Verify on Quote
. Available Qty: 511
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Content last revised on August 28, 2026

MG30G6EL2 Description

Target_Applications
MG30G6EL2 could be used in High Power Switching / Motor Control Applications

HIGH POWER SWITCHING APPLICATIONS.MOTOR CONTROL APPLICATIONS.
FEATURES:
The Collector is Isolation from Case.
6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package.
High DC Current Gain: hfe=100(Min.) (Ic=30A)
Low Saturation Voltage:VcE(sat)=2.0V(Max.) (Ic=30A)
High Speed : tf*3μs(Max.) (Ic=30A)

Maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :30A
Collector current Icp 1ms Tc=25°C :60A
Collector power dissipation Pc:200W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 30 N·m

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