#TOSHIBA, #MG50H2DM1, #IGBT_Module, #IGBT, MG50H2DM1 TRANSISTOR 50 A, 500 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 2-108B1A, 8 PIN, FET General Purpos
Manufacturer Part Number: MG50H2DM1Part Life Cycle Code: ObsoleteIhs Manufacturer: Toshiba CORPPackage Description: FLANGE MOUNT, R-PUFM-X8Pin Count: 8Manufacturer: Toshiba America Electronic ComponentsRisk Rank: 5.82Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 50 ADrain-source On Resistance-Max: 0.13 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X8Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 100 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON TRANSISTOR 50 A, 500 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 2-108B1A, 8 PIN, FET General Purpose Power