MG50N2YS1 Description
GTR MODULE; SILICON N CHANNEL IGBT. High power switching applications. Motor control applications.
MG50N2YS1 0.49 lbs
Target_Applications
MG50N2YS1 could be used in High power switching applications. Motor control applications.
Features
Electrodes are isolated from the heat sink (25oov AC).
High DC current Gain (h) (80 or 100 MIN).
Low saturation voltage (2 or 2.5V maximum).
Wide safe operating area.
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
VCES Collector-Emitter Voltage 1100V
VGES Gate-Emitter voltage:±20V
±lc Collector Current Tc= 25°C 50A
±ICP Collector Current (Peak) TC= 25°C 100A
PC Collector Dissipation TC= 25°C 350W
Tj Junction Temperature -20~+100°C
Tstg Storage Temperature -40~+125°C
Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500V
Mounting screw torque 2.0~3.0 N·m
