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IXYS MIEB100W1200TEH

  • MIEB100W1200TEH
  • MIEB100W1200TEH Insulated Gate Bipolar Transistor, 183A I(C), 1200V V(BR)CES,; MIEB100W1200TEH

    · Categories: IGBT
    · Manufacturer: IXYS
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 730
    MOQ: 1 PC
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    Content last revised on June 25, 2023

    Manufacturer Part Number: MIEB100W1200TEHRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPManufacturer: IXYS CorporationRisk Rank: 5.66Collector Current-Max (IC): 183 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Voltage-Max: 20 VNumber of Elements: 1Operating Temperature-Max: 125 °CPower Dissipation-Max (Abs): 630 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 2.2 V Insulated Gate Bipolar Transistor, 183A I(C), 1200V V(BR)CES,

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