MIG15J503H Description
Toshiba power module
MIG15J503 His an intelligent power module for three-phase inverter system.The 4th generation low saturation voltage trench gate IGBT andFRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI(silicon-on-insulator)process drives thesedirectly in response to a PWM signal. Moreover, since high-voltage level-shifteris built in high-voltageIC, while being able to perform a direct drive without theinterface with which the upper arm IGBT is insulated, the drive power supply of an upper arm can be driven with a bootstrap system,and the simplification of a system is possible.Furthermore, each lower arm emitter terminal has been independent sothat detection can perform current detection at the time of vector control by current detection resistance of a lower arm. The protection function builds in Under VoltageProtection, Short Circuit Protection, and Over TemperatureProtection. Original high thermal conduction resin is adopted as a package, and lowheat resistance is realized.
Features
•The 4th generation trench gate thin wafer NPTIGBT is adopted.
•FRD is built in.
•The level shift circuit by high-voltage IC is built in.
•The simplification of a high side driver power supply is possible bythe bootstrap system.
•Short Circuit Protection, Over TemperatureProtection, and the Power Supply Under VoltageProtection function are built in.•Short Circuit Protection and Over TemperatureProtectionstate areoutputted.
•The lower arm emitter terminal has been independent by each phase forthe purpose of the current detectionat the time of vector control.
•Lowthermal resistance by adoption of original high thermal conduction resin.
Since this product is MOS structure, it should be careful of staticelectricity in the case of handling.
This tentative specification is a development examinationstage, and may change the contents without a preliminary announcement.
Absolute Maximum Rating (Tj =25°C)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :15A
Collector current Icp 1ms Tc=25°C :30A
Collector power dissipation Pc:43W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
