#TOSHIBA, #MIG50Q6CSB1X, #IGBT_Module, #IGBT, MIG50Q6CSB1X Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES; MIG50Q6CSB1X
Manufacturer Part Number: MIG50Q6CSB1XPart Life Cycle Code: ActiveIhs Manufacturer: Mitsubishi ELECTRIC CORPManufacturer: Mitsubishi ElectricRisk Rank: 5.73Collector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 1200 VNumber of Elements: 1Operating Temperature-Max: 100 °CPower Dissipation-Max (Abs): 580 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 2.6 V Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES