#IXYS, #MUBW35_06A6K, #IGBT_Module, #IGBT, MUBW35-06A6K Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, E1-PACK-25; MUBW35-06A6K
Manufacturer Part Number: MUBW35-06A6KPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X21Pin Count: 25Manufacturer: IXYS CorporationRisk Rank: 2.26Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 42 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X21JESD-609 Code: e3Number of Elements: 7Number of Terminals: 21Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 130 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, E1-PACK-25