BSM35GD120DN2
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: No
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Continuous Collector Current at 25 C: 550 A
Pd - Power Dissipation: 2700 W
Package / Case: 62 mm
Maximum Operating Temperature: + 150 C
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
6IGBT: 35A1200V; IGBT Modules 1200V 400A SINGLE
