SKM200GB12V
Features
• V-IGBT = 6. Generation Trench V-IGBT (Fuji)
• CAL4 = Soft switching 4. Generation CAL-diode
• Isolated copper baseplate using DBC technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
• AC inverter drives
• UPS
• electronic welders
Remarks
• Case temperature limited to Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:200A
Collector current Icp:600A
Collector-Emitter voltage VCES:4000V
Mounting screw torque 3.5 *1 N·m
