Semikron SKM200GB12V IGBT Module

SKM200GB12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Typical Applications* • AC inverter drives • UPS • electronic welders Remarks • Case temperature limited to  Tc = 125°C max, recomm.  Top = -40 ... +150°C, product  rel. results valid for Tj = 150° Maximum ratings and characteristics  .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:1200V Gate-Emitter voltage VGES:±20V Collector current Ic:200A Collector current Icp:600A Collector-Emitter voltage VCES:4000V Mounting screw torque 3.5 *1 N·m   IGBT ModuleTrans IGBT Module N-CH 1200V 600A 7-Pin