#ON Semiconductor, #MUN5213DW1T3G, #IGBT_Module, #IGBT, MUN5213DW1T3G Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 10000-REEL; MUN5213DW1T3G
Manufacturer Part Number: MUN5213DW1T3GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-G6Pin Count: 6Manufacturer Package Code: 419B-02ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.66Additional Feature: BUILT IN BIAS RESISTANCE RATIO IS 1Collector Current-Max (IC): 0.1 ACollector-Emitter Voltage-Max: 50 VConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 80JESD-30 Code: R-PDSO-G6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 0.256 WSubcategory: BIP General Purpose Small SignalSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 10000-REEL