#NIEC, #P2H10M441H, #IGBT_Module, #IGBT, P2H10M441H Power Field-Effect Transistor, 60A I(D), 450V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semicondu
Manufacturer Part Number: P2H10M441HPart Life Cycle Code: Lifetime BuyIhs Manufacturer: KYOCERA CORPPackage Description: MODULE-8Manufacturer: KYOCERA CorporationRisk Rank: 5.28Case Connection: ISOLATEDConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTORDS Breakdown Voltage-Min: 450 VDrain Current-Max (ID): 60 ADrain-source On Resistance-Max: 0.085 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XUFM-X8Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 170 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 60A I(D), 450V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8