Sell NIEC PDMB50B12 New Stock

PDMB50B12 Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; PDMB50B12
  • Part Number:    

    PDMB50B12

  • Category:    

    IGBT Module

  • Manufacturer:    

    NIEC

  • Packaging:    

    IGBT module

  • Data Code:    

    11+

  • Qty Available:    

    150

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NIEC PDMB50B12 New Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-7, PDMB50B12 pictures, PDMB50B12 price, PDMB50B12 supplier
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Manufacturer Part Number: PDMB50B12
Part Life Cycle Code: Active
Ihs Manufacturer: KYOCERA CORP
Package Description: FLANGE MOUNT, R-XUFM-X7
Manufacturer: KYOCERA Corporation
Risk Rank: 5.21
Case Connection: ISOLATED
Collector Current-Max (IC): 50 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X7
Number of Elements: 2
Number of Terminals: 7
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 250 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 800 ns
Turn-on Time-Nom (ton): 400 ns
VCEsat-Max: 2.4 V
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Shunlongwei Inspected every PDMB50B12 before Ship, All PDMB50B12 with 6 months warranty.

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