Mitsubishi PM200CG1C120 IGBT Module

FEATURE

a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process.

For example, typical Vce(sat)=1.9V @Tj=125°C

b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM.

• 3φ 200A, 1200V Current-sense IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (Fo available from all arm devices)

• Acoustic noise-less 37kW class inverter application

• UL Recognized Yellow Card No.E80276(N)

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

• VCES (Collector-Emitter Voltage): 1200V
• IC (Collector Current): 200A
• ICP (Collector Current Peak): 400A
• PC (Collector Dissipation): 1041W
• Tj (Junction Temperature):  -20°C to +150°C