Content last revised on March 28, 2024
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process.
For example, typical Vce(sat)=1.9V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM.
• 3φ 200A, 1200V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (Fo available from all arm devices)
• Acoustic noise-less 37kW class inverter application
• UL Recognized Yellow Card No.E80276(N)
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
- VCES (Collector-Emitter Voltage): 1200V
- IC (Collector Current): 200A
- ICP (Collector Current Peak): 400A
- PC (Collector Dissipation): 1041W
- Tj (Junction Temperature): -20°C to +150°C
