#NIEC, #PTMB75B12, #IGBT_Module, #IGBT, PTMB75B12 Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-19; PTMB75B12
- Part Number:
PTMB75B12
- Category:
IGBT Module
- Manufacturer:
NIEC
- Packaging:
IGBT module
- Data Code:
11+
- Qty Available:
189
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Email us: sales@shunlongwei.com
Email us: sales@shunlongwei.com
Email: sales@shunlongwei.com
Manufacturer Part Number: PTMB75B12
Part Life Cycle Code: Active
Ihs Manufacturer: KYOCERA CORP
Package Description: FLANGE MOUNT, R-XUFM-X19
Manufacturer: KYOCERA Corporation
Risk Rank: 5.16
Case Connection: ISOLATED
Collector Current-Max (IC): 75 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X19
Number of Elements: 6
Number of Terminals: 19
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 400 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 800 ns
Turn-on Time-Nom (ton): 400 ns
VCEsat-Max: 2.4 V
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-19
Part Life Cycle Code: Active
Ihs Manufacturer: KYOCERA CORP
Package Description: FLANGE MOUNT, R-XUFM-X19
Manufacturer: KYOCERA Corporation
Risk Rank: 5.16
Case Connection: ISOLATED
Collector Current-Max (IC): 75 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X19
Number of Elements: 6
Number of Terminals: 19
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 400 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 800 ns
Turn-on Time-Nom (ton): 400 ns
VCEsat-Max: 2.4 V
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-19