Mitsubishi QM50E2Y-24 | Robust 1200V Dual IGBT for High-Reliability Power Conversion
The Mitsubishi QM50E2Y-24 is a 1200V, 50A dual IGBT module engineered for durability and consistent performance in demanding power electronics applications. Housed in a standard industrial package, this module provides a proven, cost-effective solution for designers prioritizing long-term operational reliability and straightforward system integration. It represents a deliberate balance of switching speed and low conduction losses, making it a versatile component for a wide range of medium-power inverter and converter designs where robustness is paramount.
Application Scenarios & Value Proposition
The QM50E2Y-24 excels in environments where reliability trumps the need for ultra-high switching frequencies. Its robust design provides tangible benefits across several core industrial applications.
- Industrial Motor Drives: In Variable Frequency Drive (VFD) systems up to 15 kW, this module's high breakdown voltage (1200V) offers a significant safety margin against DC bus voltage overshoots caused by regenerative braking. Its thermal stability ensures consistent performance under the variable load conditions typical of conveyor belts, pumps, and fans.
- Uninterruptible Power Supplies (UPS): The module's reliability is critical for online UPS systems. It can dependably handle the switchover from mains to battery power, managing the surge currents without degradation. The dual configuration simplifies the design of H-bridge or phase-leg topologies common in power backup solutions.
- Welding Power Supplies: Welding applications subject components to intense thermal cycling and pulsating loads. The QM50E2Y-24's sturdy construction and effective thermal management characteristics allow it to manage these stresses, providing the stable power output needed for high-quality welds.
Key Parameter Overview
The following table outlines the critical electrical and thermal characteristics for the QM50E2Y-24. These specifications are essential for accurate system modeling and thermal design. For a comprehensive list of parameters, please refer to the official datasheet.
Download the datasheet for a similar Mitsubishi H-Series IGBT module: Mitsubishi QM50HE-H Datasheet
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vces) | 1200 V |
| Continuous Collector Current (Ic) @ Tc=80°C | 50 A |
| Collector-Emitter Saturation Voltage (Vce(sat)) @ Ic=50A | Typ. 2.2 V / Max. 2.7 V |
| Configuration | Dual / Half-Bridge (2-in-1) |
| Total Power Dissipation (Pc) | 390 W |
| Isolation Voltage (Viso) | 2500 V (AC, 1 minute) |
| Operating Junction Temperature (Tj) | -40°C to +150°C |
Technical Deep Dive: The Engineering Behind the Reliability
While not leveraging the latest-generation chip technology, the QM50E2Y-24's design philosophy is rooted in proven principles that maximize operational lifespan and simplify system design.
The Advantage of a Standardized Package
The module utilizes a classic, widely adopted industrial housing. This seemingly simple feature is a significant engineering advantage. It ensures interchangeability, simplifies sourcing, and allows designers to leverage existing, well-understood thermal solutions (heatsinks, fans). The mechanical robustness of this package type has been field-proven for decades, offering superior resistance to shock and vibration compared to some smaller, more integrated surface-mount alternatives.
Balancing Conduction vs. Switching Losses
The QM50E2Y-24 features a collector-emitter saturation voltage (Vce(sat)) that is optimized for applications operating in the lower-to-mid frequency range (typically 2 kHz to 15 kHz). In motor drives and UPS systems, where the devices spend a significant portion of their time in the "on" state, minimizing conduction loss (P_cond = Vce(sat) * Ic) is often more critical to overall efficiency than minimizing switching loss. This deliberate trade-off results in lower overall heat generation and reduced stress on the silicon, contributing directly to the module's long-term reliability and making it one of the backbones of high-efficiency power systems.
Expert FAQ
What are the primary considerations for the gate drive design for the QM50E2Y-24?
A robust gate drive circuit is essential. Pay close attention to the gate charge (Qg) specification to ensure your driver can source and sink adequate current for clean, fast transitions. A standard +15V turn-on and a -5V to -15V negative turn-off voltage is recommended. The negative voltage provides a strong buffer against dv/dt induced turn-on, preventing shoot-through in the half-bridge configuration. Keep gate loop inductance to an absolute minimum by using twisted pair wiring and placing the driver as close to the module as possible.
Can the QM50E2Y-24 be paralleled for higher current applications?
While technically possible, paralleling these modules requires careful engineering. To ensure proper current sharing, the Vce(sat) of the paralleled modules should be closely matched. More importantly, meticulous thermal design is required to maintain both modules at the same temperature, as Vce(sat) has a positive temperature coefficient that can lead to thermal runaway in one device. For new designs requiring over 50A, it is almost always more reliable and cost-effective to select a single, higher-current IGBT module. If you have questions about selecting the right module for your current requirements, please contact our technical team for guidance.
