Vishay Siliconix SI3529DV-T1-E3 IGBT Module

Manufacturer Part Number: SI3529DV-T1-E3Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: TSOPPackage Description: SMALL OUTLINE, R-PDSO-G6Pin Count: 6ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.82Avalanche Energy Rating (Eas): 1.25 mJConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 40 VDrain Current-Max (Abs) (ID): 2.5 ADrain Current-Max (ID): 2.25 ADrain-source On Resistance-Max: 0.125 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNEL AND P-CHANNELPower Dissipation-Max (Abs): 1.4 WPulsed Drain Current-Max (IDM): 10 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime TRANSISTOR 2.25 A, 40 V, 0.125 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Power