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Mitsubishi CM150MXUD-24T IGBT Module

Mitsubishi CM150MXUD-24T: 1200V/150A 7-in-1 PIM with 7th Gen CSTBT™. Streamlines design, boosts reliability, and enables compact, high-efficiency power conversion systems.

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$ 76
· Date Code: 2022+
. Available Qty: 69
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CM150MXUD-24T Specification

Mitsubishi CM150MXUD-24T | High-Integration 1200V/150A PIM for Advanced Motor Drives

Streamlined Power Design with Integrated Performance

The Mitsubishi CM150MXUD-24T is not merely a component; it is an engineered subsystem designed to accelerate the development of high-performance power conversion applications. As a highly integrated 7-in-1 Power Integrated Module (PIM), this device consolidates a three-phase converter, a brake chopper, and a three-phase inverter into a single, thermally efficient package. This level of integration offers a distinct advantage for engineers aiming to reduce design complexity, minimize system size, and enhance overall reliability.

  • System Simplification: Drastically reduces printed circuit board (PCB) complexity and interconnects, lowering parasitic inductance and potential assembly errors.
  • Enhanced Reliability: By integrating multiple power stages, the number of potential failure points is significantly reduced, leading to a more robust final product.
  • Optimized Thermal Management: Features an integrated NTC thermistor for precise, real-time temperature monitoring, enabling superior over-temperature protection.
  • Proven Technology: Built upon Mitsubishi's renowned 7th Generation CSTBT™ silicon, ensuring a balance of low conduction losses and robust switching performance.

Core Technology Deep Dive: The Engineering Inside

The performance of the CM150MXUD-24T is rooted in two key technological pillars: Mitsubishi's advanced silicon and the intelligent module construction.

First, the module leverages Mitsubishi CSTBT™ (Carrier Stored Trench-Gate Bipolar Transistor) technology. This sophisticated chip structure creates an additional n-type carrier storage layer near the collector, which significantly lowers the collector-emitter saturation voltage (VCE(sat)). For the design engineer, this directly translates to lower conduction losses during operation. The tangible benefits are higher system efficiency and reduced requirements for thermal hardware, allowing for more compact and cost-effective designs.

Second, the PIM (Power Integrated Module) architecture itself is a strategic advantage. By co-packaging the rectifier diodes and inverter/brake IGBTs on a common insulated substrate, the CM150MXUD-24T provides superior thermal performance and matching compared to a discrete solution. This integration minimizes stray inductance between components, which is critical for reducing voltage overshoots during high-speed switching events and simplifying EMC compliance.

Key Parameter Overview

For engineers requiring quick-reference data, the table below highlights the critical electrical and thermal characteristics of the CM150MXUD-24T. For a comprehensive analysis, please refer to the official datasheet.

Download the full Mitsubishi CM150MXUD-24T Datasheet

Parameter Value
Collector-Emitter Voltage (VCES) 1200V
Collector Current (IC) @ Tc=80°C 150A (Inverter Part)
Collector-Emitter Saturation Voltage (VCE(sat)) @ 150A 1.75V (Typical)
Maximum Junction Temperature (Tj max) 175°C
Topology 7-in-1 (3-Phase Converter + Brake + 3-Phase Inverter)
Internal NTC Thermistor Included

Application Focus: Where the CM150MXUD-24T Excels

This IGBT module is purpose-built for applications where power density, reliability, and simplified manufacturing are paramount.

In Variable Frequency Drives (VFDs) and Motor Drives, the all-in-one nature of the CM150MXUD-24T allows for the creation of incredibly compact inverters up to approximately 75 kW. The integrated braking chopper simplifies the management of regenerative energy from decelerating motors, a common requirement in industrial automation and robotics. In Uninterruptible Power Supplies (UPS) and general-purpose inverters, the reduced component count and factory-optimized layout lead to higher production yields and improved field reliability, lowering the total cost of ownership.

Engineer's FAQ

How does the integrated NTC thermistor improve system protection?

The NTC thermistor is bonded directly to the module's substrate, placing it in close thermal proximity to the IGBT and diode chips. This provides a much faster and more accurate temperature reading compared to an external sensor placed on the heatsink. This real-time feedback allows the gate driver or system controller to implement precise over-temperature protection, preventing thermal runaway and catastrophic IGBT failure under overload or cooling system fault conditions.

Is this PIM suitable for high-frequency switching applications?

The CM150MXUD-24T, utilizing 7th Gen CSTBT™ silicon, is optimized for a balance between low conduction losses (VCE(sat)) and switching losses. It is ideally suited for motor control applications where switching frequencies typically range from 2 kHz to 15 kHz. While it can operate at the higher end of this range, designers must carefully evaluate the trade-off between switching losses and efficiency. For applications requiring significantly higher frequencies (>20 kHz), a module specifically designed for low switching energy (Eoff) might be a more appropriate choice. If you have questions about your specific application, please contact our technical team for a full system analysis.

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