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Semikrom SKiiP35NAB12T4V1 IGBT Module

Semikron SKiiP35NAB12T4V1: 1200V/75A IGBT. Solderless tech eliminates fatigue failure for maximum reliability and lifetime in compact industrial drives.

· Categories: IGBT Module
· Manufacturer: Semikrom
· Price: US$ 75
· Date Code: 2022+
. Available Qty: 416
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SKiiP35NAB12T4V1 Specification

SKiiP35NAB12T4V1: 1200V, 75A Three-Phase IGBT Module

Introduction to the SKiiP35NAB12T4V1

The SKiiP35NAB12T4V1 is a high-performance three-phase bridge inverter from the MiniSKiiP® 3 family, engineered for exceptional long-term reliability in demanding power conversion applications. This module integrates 1200V Trench-Gate V-IGBTs and CAL freewheeling diodes into a compact, solderless package. Key specifications include: 1200V VCES | 75A Nominal IC | Rth(j-s) of 0.3 K/W. The design delivers two primary engineering benefits: superior thermal performance and enhanced operational lifetime. This module directly addresses the challenge of designing compact, reliable motor drives by eliminating solder fatigue, a common point of failure in conventional power modules. For space-constrained AC motor drives requiring high thermal reliability, this solderless 75A module is the optimal design choice.

Key Parameter Overview

Decoding the Specs for Enhanced Thermal Reliability

The electrical and thermal characteristics of the SKiiP35NAB12T4V1 are optimized for efficiency and durability in high-frequency switching environments. The table below highlights the critical parameters that enable system designers to maximize performance while ensuring robust operation. Understanding these values is the first step in leveraging the module's advanced capabilities.

Parameter Symbol Condition Value
Collector-Emitter Voltage VCES Tj = 25 °C 1200 V
Nominal Collector Current IC,nom Tcase = 25 °C 75 A
Max. Collector Current IC Tcase = 70 °C, Tj = 175 °C 55 A
Collector-Emitter Saturation Voltage (IGBT) VCE(sat) IC = 50 A, Tj = 25 °C, VGE = 15 V Typ. 1.9 V (Max. 2.35 V)
Thermal Resistance, Junction to Heatsink (IGBT) Rth(j-s) Per IGBT 0.3 K/W
Thermal Resistance, Junction to Heatsink (Diode) Rth(j-s) Per Diode 0.5 K/W
Switching-on Energy Eon IC = 50 A, Tj = 125 °C 5.2 mJ
Switching-off Energy Eoff IC = 50 A, Tj = 125 °C 6.1 mJ
Max. Junction Temperature Tj,max Under switching conditions 175 °C

Download the SKiiP35NAB12T4V1 datasheet for detailed specifications and performance curves.

Application Scenarios & Value

System-Level Benefits in Compact Industrial Motor Drives

The SKiiP35NAB12T4V1 is engineered for applications where power density, efficiency, and long-term reliability are non-negotiable. Its primary application is in industrial IGBT Modules for Variable Frequency Drives (VFDs) powering AC motors, pumps, fans, and conveyor systems. What is the benefit of its integrated heat sink and low thermal resistance? It allows for more compact system designs and simplified manufacturing.

Consider a high-fidelity engineering scenario: designing a VFD for a materials handling system that must operate within a sealed, fanless enclosure to meet IP65 ratings. The primary challenge is heat dissipation. The SKiiP35NAB12T4V1's low Rth(j-s) of 0.3 K/W per IGBT provides a highly efficient path for thermal energy to move from the silicon to the heatsink. This superior thermal transfer, akin to having a wider pipe for heat to escape, means the system can operate at higher power levels or with a smaller, more cost-effective heatsink without exceeding the maximum junction temperature. Furthermore, the integrated NTC thermistor provides real-time temperature feedback, enabling the drive's control system to implement precise thermal throttling or shutdown protocols, safeguarding both the module and the motor. While this model is ideal for drives up to approximately 22 kW, for higher power requirements, the related SKiiP39GA12T4V1 offers increased current handling within the same technology family.

Technical Deep Dive

The Reliability Advantage of Solderless Pressure-Contact Technology

A key differentiator of the SKiiP35NAB12T4V1 is its use of Semikron's proven SKiiP technology. Unlike conventional modules that rely on soldered connections between the DBC substrate and the baseplate, this module utilizes a robust pressure-contact system. This design choice directly addresses a primary failure mechanism in power electronics: solder fatigue. Over thousands of thermal cycles, the expansion and contraction of different materials can cause micro-cracks in solder layers, increasing thermal resistance and eventually leading to catastrophic failure.

The pressure-contact system completely eliminates this risk. Think of it as the difference between a soldered joint and a high-tensile bolted connection in a structure subject to constant vibration. The bolted connection maintains consistent, reliable contact indefinitely, whereas the soldered joint is prone to fatigue. This gives the SKiiP35NAB12T4V1 a significantly higher Power Cycling Capability, making it an inherently more reliable solution for applications with frequent start/stop cycles or fluctuating load profiles, such as servo drives and solar inverters.

Frequently Asked Questions (FAQ)

What is the primary advantage of the solderless SKiiP technology in the SKiiP35NAB12T4V1?
The core advantage is drastically improved long-term reliability and operational lifetime. By eliminating solder layers, the module is immune to solder fatigue and delamination failures caused by thermal cycling, ensuring a consistent thermal path and mechanical integrity over the product's life.

How does the integrated NTC thermistor simplify thermal protection design?
The integrated NTC provides a direct, accurate measurement of the module's internal temperature. This allows design engineers to connect it directly to the microcontroller's ADC for implementing precise over-temperature protection (OTP). It removes the need for external temperature sensors, reducing component count, simplifying PCB layout, and providing a faster response to thermal events.

What is the significance of the Trench-Gate V-IGBT technology used in this module?
Trench-Gate V-IGBT technology provides a lower on-state voltage drop (VCE(sat)) compared to older planar IGBT structures. A lower VCE(sat) directly translates to lower conduction losses, which means less heat is generated during operation. This results in higher overall inverter efficiency and reduces the burden on the cooling system.

For what type of applications is a 1200V, 75A module like this typically specified?
This module is ideally specified for 3-phase, 380V - 480V AC industrial motor drives and power conversion systems. The 1200V rating provides a safe voltage margin for these line voltages, while the 75A nominal current rating makes it suitable for motor applications in the 15 kW to 22 kW (20-30 hp) range, depending on switching frequency and cooling conditions.

Strategic Design Considerations

Integrating the SKiiP35NAB12T4V1 into a power system is a strategic decision that prioritizes total cost of ownership over initial component cost. The inherent reliability of the solderless design translates to lower field failure rates, reduced warranty claims, and enhanced brand reputation. For designers of next-generation industrial automation and renewable energy systems, where uptime and service life are paramount, the robust thermal and mechanical architecture of this MiniSKiiP® module from Semikron Danfoss provides a foundational building block for creating highly dependable and efficient products.

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