Semikron SKIM200GD126D | Robust 1200V Six-Pack IGBT for High-Performance Drives
The Semikron SKIM200GD126D is a workhorse six-pack IGBT module designed for engineers who require a blend of high performance, thermal stability, and design simplicity. Housed in the industry-proven SKIM® 4 package, this 1200V, 200A module integrates a full three-phase inverter bridge, providing a compact and reliable power core for demanding medium-power applications.
Core Engineering Advantages
- Optimized Power Density: Integrates six IGBTs in a single, low-inductance module, simplifying busbar design, reducing stray inductance, and enabling more compact system layouts.
- Superior Efficiency: Leverages Semikron's advanced Trench Fieldstop IGBT 4 technology to minimize both conduction and switching losses, directly contributing to lower operating temperatures and reduced cooling requirements.
- Enhanced Reliability: Features fast and soft-recovery CAL 4 (Controlled Axial Lifetime) freewheeling diodes, which mitigate voltage overshoots and reduce EMI, leading to more robust and reliable inverter operation.
- Scalable Performance: The positive temperature coefficient of its saturation voltage (VCEsat) makes the Semikron SKIM200GD126D exceptionally well-suited for paralleling, ensuring stable current sharing in higher-power designs without the risk of thermal runaway.
Technical Deep Dive: The Engineering Behind the Performance
Two key technologies define the superior performance of the SKIM200GD126D. First, the Trench Fieldstop IGBT 4 silicon is engineered for a precise balance between on-state voltage drop and switching speed. For a design engineer, this means achieving a low VCE(sat), which reduces conduction losses—the primary source of heat in motor drives operating at lower to medium frequencies. Second, the co-packed CAL 4 Diode is not a standard diode. Its "soft" recovery characteristic is critical for modern inverter designs. This controlled recovery behavior drastically reduces voltage peaks during turn-off, which simplifies or even eliminates the need for complex snubber circuits and eases the burden of EMC filtering.
Key Parameter Overview
The following table provides a snapshot of the critical performance metrics for the SKIM200GD126D. For comprehensive data, including thermal characteristics and dynamic curves, please download the official datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (V_CES) | 1200 V |
| Nominal Collector Current (I_C nom) | 200 A (@ T_s = 25 °C) |
| V_CE(sat) (Typical) | 1.75 V (@ I_C = 200 A, T_j = 25 °C) |
| Short Circuit Withstand Time (t_psc) | ≥ 10 µs (@ T_j = 150 °C) |
| Thermal Resistance, Junction to Sink (R_th(j-s)) per IGBT | 0.17 K/W |
Application Spotlight: Where the SKIM200GD126D Excels
The specific feature set of the Semikron SKIM200GD126D makes it a prime candidate for power conversion systems where efficiency and durability are non-negotiable. In industrial motor drives and robotic servo drives, its low thermal resistance and efficient switching minimize waste heat, allowing for higher power density and extending the lifetime of the drive. For Uninterruptible Power Supplies (UPS), the module's robust design and the reliability offered by the soft-recovery diodes ensure dependable operation during critical power transitions. The integrated six-pack topology simplifies manufacturing and improves the overall reliability of the final system by reducing component count and interconnects.
Frequently Asked Engineering Questions (FAQ)
1. What is the recommended gate drive voltage for this module?
To ensure full saturation and minimize conduction losses, a positive gate voltage (V_GE) of +15V is recommended. For a clean and rapid turn-off, and to prevent parasitic turn-on induced by high dv/dt, a negative gate voltage of -8V to -15V is crucial. Employing a dedicated gate driver with a low impedance path and a Kelvin emitter connection will yield the best performance.
2. How does the positive temperature coefficient of VCE(sat) aid in paralleling?
This characteristic provides an inherent self-balancing mechanism. If one of several paralleled IGBT modules begins to carry a disproportionate amount of current, its junction temperature will rise. This temperature increase causes its VCE(sat) to also increase, effectively raising its on-state resistance. This change naturally diverts current to the other, cooler modules in the array. This behavior is fundamental to preventing thermal runaway and ensures the long-term stability of high-current inverter designs without requiring complex current-balancing circuitry.
