Semikron SKKQ1500/18E | Robust 1800V Dual IGBT for High-Power Converters
The Semikron SKKQ1500/18E is an engineered powerhouse, a dual IGBT module designed for engineers developing high-reliability, high-power conversion systems. This module is not just a collection of specifications; it is a strategic component built to solve the core challenges of efficiency, thermal management, and longevity in demanding medium-voltage applications. Part of the renowned SEMITRANS 10 family, it provides a trusted platform for scaling power electronics to the megawatt level.
Engineered for Performance and Reliability
At the heart of the SKKQ1500/18E lies a synergy of proven technologies and robust packaging, delivering tangible benefits to system designers:
- High Voltage Headroom: With a 1800V collector-emitter voltage (VCES), this module offers a substantial safety margin for systems operating on 1000V and even 1500V DC-links, a critical factor in modern renewable energy and industrial drives.
- Exceptional Current Handling: A nominal current rating of 1500A enables massive power throughput, reducing the need for complex paralleling in many high-current applications.
- Optimized Switching Behavior: Leveraging Semikron's mature IGBT4 and CAL4 diode technology, the module achieves a superior balance between low conduction losses and controlled switching performance.
- Industry-Standard Package: The SEMITRANS 10 housing is recognized for its mechanical stability and features an isolated baseplate, simplifying thermal design and assembly onto heatsinks.
Technical Deep-Dive: The Core of the SKKQ1500/18E
IGBT4 Trench Field-Stop Technology
The performance of the SKKQ1500/18E is anchored by Semikron's fourth-generation trench gate field-stop IGBTs. Unlike earlier planar designs, this trench structure dramatically increases the carrier density in the conducting state, resulting in a very low on-state voltage (VCE(sat)). The direct engineering benefit is a significant reduction in conduction losses, which are often the dominant loss component in high-current, lower-frequency applications like motor drives. This translates to higher overall system efficiency and reduced thermal load on the cooling system.
CAL4 Freewheeling Diode Performance
The freewheeling diode is as critical as the IGBT itself. The SKKQ1500/18E integrates a Semikron CAL Diode (Controlled Axial Lifetime). This specialized diode is engineered for soft recovery characteristics. During turn-off, it avoids the abrupt current drop that causes high voltage overshoots and high-frequency oscillations (EMI). This "soft" behavior reduces the stress on the IGBT, minimizes the need for aggressive snubber circuits, and simplifies electromagnetic compatibility (EMC) compliance—saving both board space and design time.
Application Scenarios: Where Performance Translates to Value
Medium-Voltage Drives (MVDs)
In MVDs for industrial pumps, fans, and compressors, reliability is paramount. The SKKQ1500/18E's robust thermal cycling capability and high short-circuit withstand time provide the durability needed for continuous operation. Its efficiency minimizes operational expenditure by reducing wasted energy, a key consideration in large-scale industrial installations. This makes it a cornerstone component for building more efficient high-efficiency inverter ACs.
Renewable Energy Inverters
For large central solar inverters and wind turbine pitch control systems, maximizing energy harvest is the primary goal. The module’s low VCE(sat) directly contributes to higher conversion efficiency. Furthermore, its proven reliability ensures a long service life, reducing maintenance costs and downtime in remote or difficult-to-access locations, a critical factor in powering the conversion from wind to the grid.
Key Technical Specifications
The following table provides a quick overview of the module's critical electrical and thermal parameters. For a comprehensive list of parameters and characteristic curves, download the official Semikron SKKQ1500/18E datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 1800 V |
| Nominal Collector Current (ICnom) | 1500 A |
| Collector-Emitter Saturation Voltage (VCE(sat), typ. at ICnom, Tj=125°C) | 2.1 V |
| Short Circuit Withstand Time (tsc) | 10 µs |
| Thermal Resistance, Junction to Case (Rth(j-c) per IGBT) | 0.016 K/W |
| Operating Junction Temperature (Tvj op) | -40 to +150 °C |
Frequently Asked Questions (FAQ)
Can the SKKQ1500/18E be paralleled for applications exceeding 1500A?
Yes, paralleling these modules is a common practice for achieving very high output currents. The IGBT4 technology features a positive temperature coefficient for VCE(sat), which helps promote natural current sharing between modules. However, successful IGBT paralleling requires meticulous attention to layout symmetry. This includes ensuring identical gate drive path inductances and a balanced thermal design to keep the junction temperatures of the paralleled modules as close as possible.
What are the primary advantages of the SEMITRANS 10 package design?
The SEMITRANS 10 package is purpose-built for high-power applications. Its key advantages include a large, flat, and isolated baseplate which simplifies mounting and ensures a low-resistance thermal path to the heatsink. The robust screw terminals for both control and power connections are designed to handle high currents and resist vibration, ensuring long-term connection integrity, which is a common failure point in lesser designs.
For application-specific design support, thermal analysis, or to discuss how the SKKQ1500/18E can enhance your next high-power project, please contact our technical team.
