Content last revised on April 27, 2024
SKM200GAL125D Features:
.N channel , homogeneous
.Si Low inductance case
.Short tail current with low temperature dependence
.High short circuit capability, self limiting to 6 x I cnom
.Fast & soft inverse CAL diodes Isolated copper baseplate using
.DCB Direct Copper Bonding Technology
.Large clearance (13 mm) and creepage distance (20 mm)
Typical Applications:
.Switched mode power supplies at f sw > 20 kHz
.Resonant inverters up to 100 kHz Inductive heating
.electronic welders at f sw > 20 kHz
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:200A
Collector current Icp:300A
Collector power dissipation Pc:180W
Collector-Emitter voltage VCES:4000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
TRANSISTOR IGBT POWER MODULE INDEPENDENT 1.2kV V(BR)CES 200A I(C)
SKM200GAL125D Features:
.N channel , homogeneous
.Si Low inductance case
.Short tail current with low temperature dependence
.High short circuit capability, self limiting to 6 x I cnom
.Fast & soft inverse CAL diodes Isolated copper baseplate using
.DCB Direct Copper Bonding Technology
.Large clearance (13 mm) and creepage distance (20 mm)
Typical Applications:
.Switched mode power supplies at f sw > 20 kHz
.Resonant inverters up to 100 kHz Inductive heating
.electronic welders at f sw > 20 kHz
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:200A
Collector current Icp:300A
Collector power dissipation Pc:180W
Collector-Emitter voltage VCES:4000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
TRANSISTOR IGBT POWER MODULE INDEPENDENT 1.2kV V(BR)CES 200A I(C)
