Semikron SKM200GAL125D IGBT Module

SKM200GAL125D Features: .N channel , homogeneous .Si Low inductance case .Short tail current with low temperature dependence .High short circuit capability, self limiting to 6 x I cnom .Fast & soft inverse CAL diodes Isolated copper baseplate using .DCB Direct Copper Bonding Technology .Large clearance (13 mm) and creepage distance (20 mm) Typical Applications: .Switched mode power supplies at f sw > 20 kHz .Resonant inverters up to 100 kHz Inductive heating .electronic welders at f sw > 20 kHz  Maximum ratings and characteristics  .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:1200V Gate-Emitter voltage VGES:±20V Collector current Ic:200A Collector current Icp:300A Collector power dissipation Pc:180W Collector-Emitter voltage VCES:4000V Operating junction temperature Tj:+150°C Storage temperature Tstg :-40 to +125°C TRANSISTOR IGBT POWER MODULE INDEPENDENT 1.2kV V(BR)CES 200A I(C)