Content last revised on April 17, 2024
SKM200GAL126D Features:
.Homogeneous Si
.Trench=Trenchgate technology
.V CE(sat) with positive temperature coefficient
.High short circuit capability, self limiting to 6 x Icnom
.Fast & soft inverse CAL diodes
.Large clearance (10 mm) and creepage distances (20 mm) Isolated copper baseplate using DBC .Technology (Direct Copper Bonding) UL recognized, file no.
Typical Applications:
.electronic welders
.DC/DC - converter
.Brake chopper
.Switched reluctance motor
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:260A
Collector current Icp:300A
Collector-Emitter voltage VCES:4000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
IGBT Module 1.7kv 220a Semitrans 3
