#Semikron, #SKM200GAL126D, #IGBT_Module, #IGBT, SKM200GAL126D Igbt Module 1.7kv 220a Semitrans 3;
SKM200GAL126D Features: .Homogeneous Si .Trench=Trenchgate technology .V CE(sat) with positive temperature coefficient .High short circuit capability, self limiting to 6 x Icnom .Fast & soft inverse CAL diodes .Large clearance (10 mm) and creepage distances (20 mm) Isolated copper baseplate using DBC .Technology (Direct Copper Bonding) UL recognized, file no. Typical Applications: .electronic welders .DC/DC - converter .Brake chopper .Switched reluctance motor Maximum ratings and characteristics .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:1200V Gate-Emitter voltage VGES:±20V Collector current Ic:260A Collector current Icp:300A Collector-Emitter voltage VCES:4000V Operating junction temperature Tj:+150°C Storage temperature Tstg :-40 to +125°C IGBT Module 1.7kv 220a Semitrans 3