SEMIKRON SKT431F10DS IGBT Module

Manufacturer Part Number: SKT431F10DSPart Life Cycle Code: ObsoleteIhs Manufacturer: Semikron INTERNATIONALPackage Description: DISK BUTTON, O-CEDB-N2HTS Code: 8541.30.00.80Manufacturer: SemikronRisk Rank: 5.82Additional Feature: FASTCircuit Commutated Turn-off Time-Nom: 15 µsConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 500 V/usDC Gate Trigger Current-Max: 250 mADC Gate Trigger Voltage-Max: 4 VHolding Current-Max: 400 mAJEDEC-95 Code: TO-200ABJESD-30 Code: O-CEDB-N2Leakage Current-Max: 80 mANon-Repetitive Pk On-state Cur: 8000 ANumber of Elements: 1Number of Terminals: 2On-state Current-Max: 430000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONQualification Status: Not QualifiedRMS On-state Current-Max: 1100 ARepetitive Peak Off-state Leakage Current-Max: 80000 µARepetitive Peak Off-state Voltage: 1000 VRepetitive Peak Reverse Voltage: 1000 VSubcategory: Silicon Controlled RectifiersSurface Mount: YESTerminal Form: NO LEADTerminal Position: ENDTrigger Device Type: SCR Silicon Controlled Rectifier, 1100A I(T)RMS, 430000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB