#ON Semiconductor, #SMMBT5551LT1G, #IGBT_Module, #IGBT, SMMBT5551LT1G High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL; SMMBT5551LT1G
Manufacturer Part Number: SMMBT5551LT1GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: ,Pin Count: 3Manufacturer Package Code: 318-08ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 0.59Collector Current-Max (IC): 0.6 ACollector-Emitter Voltage-Max: 160 VConfiguration: SINGLEDC Current Gain-Min (hFE): 30JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Operating Temperature-Max: 150 °CPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 0.3 WReference Standard: AEC-Q101Subcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Time High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL