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QM100HY-H Mitsubishi Electric 600V 100A Darlington Transistor Module

QM100HY-H Transistor Module In-stock / Mitsubishi: 600V 100A. Durable Darlington switch. 90-day warranty, motor control. Fast shipping. Get quote.

· Categories: Thyristor/Diode Module
· Manufacturer: Mitsubishi
· Price: US$ 31 In-Stock Offer
· Date Code: Please Verify on Quote
. Available Qty: 400
90-Day Warranty
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Content last revised on July 27, 2026

Mitsubishi Electric QM100HY-H: Insulated Darlington Transistor Module for Robust Power Control

The QM100HY-H Darlington module from Mitsubishi Electric delivers exceptional thermal efficiency and high current gain for industrial drives. It features ratings of 600V | 100A and a low junction-to-case thermal resistance. This module resolves thermal bottlenecks and simplifies base-drive stage requirements in high-power applications. For industrial servo drives and motor controllers prioritizing thermal reliability, the 600V QM100HY-H module is the optimal choice.

Application Scenarios & Value

Achieving System-Level Thermal Stability in Industrial Motor Controls

Engineers often face base-drive complexity and thermal runaway issues when retrofitting classic industrial controllers. Consider the case of a switch-mode welding power supply operating under high duty cycles. Transient current surges can easily overheat the semiconductor junctions, leading to catastrophic failure. By using the QM100HY-H with its high collector dissipation rating of 620W, design engineers can safely absorb surge energies without risking junction degradation.

The integrated fast freewheeling diode provides robust protection against reverse voltage spikes, ensuring safe operation during inductive load switching. While this 600V model is excellent for standard industrial lines, systems requiring double-configuration switching may benefit from the related QM100DY-H dual Darlington module, or the high-voltage QM100DY-2HBK offering a 1000V rating.

Technical & Design Deep Dive

Analyzing Silicon Isolation and Current Gain for Bipolar Systems

In high-power industrial electronics, heat dissipation is a critical design factor. The junction-to-case thermal resistance (Rth(j-c)) of the QM100HY-H transistor part is rated at a maximum of 0.2 °C/W. This parameter acts like a wide thermal highway. Just as a wider road allows traffic to clear faster, a lower thermal resistance allows heat generated at the silicon junction to quickly escape to the heatsink, preventing localized thermal bottlenecks.

Additionally, the DC current gain (hFE) is rated at a minimum of 75 under a 100A collector current. This parameter acts like a mechanical pulley system. In a physical pulley setup, a small input force lifts a heavy load. Similarly, a high gain means a base current of just 1.3A is required to switch the massive 100A load. This feature reduces the drive stage requirements and simplifies auxiliary power supply designs.

Safety is further enhanced by the 2500V AC isolation rating between the active terminals and the copper baseplate. This electrical isolation simplifies chassis mounting and streamlines safety compliance for industrial VFDs and servo systems.

Key Parameter Overview

Functional Specifications and Operating Ratings

The following table summarizes the key electrical and thermal parameters of the QM100HY-H module, categorized by functional groupings:

Category Parameter Symbol Typical Value Maximum Limit Unit
Maximum Ratings Collector-Emitter Voltage (VEB = 2V) VCEX 600 V
Continuous Collector Current (DC) IC 100 A
Collector Dissipation PC 620 W
Electrical Performance Collector-Emitter Saturation Voltage VCE(sat) 2.0 V
Base-Emitter Saturation Voltage VBE(sat) 2.5 V
DC Current Gain (VCE = 2.0V) hFE 100
Thermal Characteristics Junction-to-Case Resistance (Transistor) Rth(j-c)Q 0.2 °C/W
Junction-to-Case Resistance (Diode) Rth(j-c)R 0.65 °C/W
Contact Thermal Resistance (Greased) Rth(c-f) 0.075 °C/W

Download the QM100HY-H datasheet for detailed specifications and performance curves.

Frequently Asked Questions

Addressing Key Implementation and Diagnostic Concerns

How does the Rth(j-c) thermal resistance affect heatsink selection?
A low thermal resistance of 0.2 °C/W directly reduces the heatsink surface area required to keep junction temperatures below the 150°C limit. By optimizing the thermal path, engineers can reduce heatsink weight and system cost. For more details on budgeting thermal paths, review the IGBT and Darlington Selection Guide.

Why does this module feature a hFE gain specification of 75 at 100A?
Legacy industrial controllers use NPN Darlington modules that rely on current-controlled switching. A minimum current gain of 75 ensures that standard drive circuits can fully saturate the transistor without requiring auxiliary booster circuits. This maintains compatibility and reduces switching losses in older hardware configurations. Further diagnostic and test procedures are outlined in our Field Engineers Handbook.

To request technical support, confirm pricing, or check component availability for your production schedule, please contact our global sales team today.

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