#MITSUBISHI, #TM10T3B_M, #IGBT_Module, #IGBT, TM10T3B-M Silicon Controlled Rectifier, 15.7A I(T)RMS, 400V V(DRM), 400V V(RRM), 3 Element; TM10T3B-M
Manufacturer Part Number: TM10T3B-MPbfree Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-D9HTS Code: 8541.30.00.80Manufacturer: Mitsubishi ElectricRisk Rank: 5.78Case Connection: ISOLATEDConfiguration: 3 PHASE BRIDGE, HALF-CONTROLLED, COMMON CATHODE WITH BUILT-IN SERIES DIODEDC Gate Trigger Current-Max: 50 mADC Gate Trigger Voltage-Max: 2 VDesc. of Quick-Connects: 0Desc. of Screw Terminals: 0JESD-30 Code: R-PUFM-D9Leakage Current-Max: 4 mANon-Repetitive Pk On-state Cur: 200 ANumber of Elements: 3Number of Terminals: 9Operating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRMS On-state Current-Max: 15.7 ARepetitive Peak Off-state Voltage: 400 VRepetitive Peak Reverse Voltage: 400 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Form: SOLDER LUGTerminal Position: UPPERTime Silicon Controlled Rectifier, 15.7A I(T)RMS, 400V V(DRM), 400V V(RRM), 3 Element