BSM50GD120DN2E3226
Infineon BSM50GD120DN2E3226 New IGBT Modules N-CH 1.2KV 50A
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Manufacturer:Infineon
Product Category:IGBT Modules
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.5 V
Continuous Collector Current at 25 C:50 A
Gate-Emitter Leakage Current:200 nA
Pd - Power Dissipation:350 W
Package / Case:EconoPACK 2
Maximum Operating Temperature:+ 150 C
Packaging:Tray
Height:17 mm
Length:107.5 mm
Technology:Si
Width:45.5 mm
Brand:Infineon Technologies
Mounting Style:Chassis Mount
Maximum Gate Emitter Voltage:20 V
IGBT Modules N-CH 1.2KV 50A
Shunlongwei Inspected Every BSM50GD120DN2E3226 Before Ship, All BSM50GD120DN2E3226 with 6 months warranty.
