TM400CZ-H Mitsubishi 600V 400A IGBT Module

  • TM400CZ-H

TM400CZ-H IGBT Module In-stock / Mitsubishi: 600V 400A, featuring low VCE(sat) for high efficiency. 90-day warranty, for industrial motor drives. Global fast shipping. Get quote.

· Categories: IGBT
· Manufacturer: MITSUBISHI
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Content last revised on February 27, 2026

The TM400CZ-H: An In-Depth Engineering Review

A Workhorse for High-Current Power Systems

Driving Efficiency and Reliability in Demanding Industrial Applications

The Mitsubishi TM400CZ-H is a single IGBT module designed for robust performance in high-power switching applications. Engineered as part of the H-Series, this module provides a proven solution for system designers prioritizing stable operation and thermal efficiency. With core specifications of 600V and 400A, it is built to manage substantial power loads. Its key engineering benefits include minimized conduction losses and excellent thermal stability, directly contributing to enhanced system longevity. For engineers evaluating components for high-current inverters, the TM400CZ-H offers a foundation of proven technology. Its design inherently addresses the challenge of maintaining performance under demanding load cycles, making it a fitting choice for industrial systems where reliability is paramount.

Application Scenarios & Value

Achieving System-Level Benefits in Industrial Power Conversion

The TM400CZ-H IGBT module is engineered for deployment in high-stress industrial environments where consistent power delivery is critical. Its 600V collector-emitter voltage and 400A continuous collector current ratings make it a formidable component for applications such as industrial motor drives, high-power uninterruptible power supplies (UPS), and welding power sources.

Consider a specific engineering challenge: designing a 150 kW Variable Frequency Drive (VFD) for a heavy-duty conveyor system. During motor startup and under fluctuating loads, the power electronics must handle significant current without succumbing to thermal stress. The TM400CZ-H excels here due to its low collector-emitter saturation voltage (VCE(sat)), a key characteristic derived from its underlying CSTBT™ technology. This low VCE(sat) directly translates to lower conduction losses, meaning less waste heat is generated within the module. For the VFD designer, this reduces the dependency on oversized or complex thermal management systems, enabling a more compact and cost-effective overall design while improving long-term reliability. For systems requiring even higher current capabilities, the CM600DX-24T offers a dual-IGBT configuration with a higher voltage rating.

Key Parameter Overview

Decoding the Specs for Enhanced Thermal Performance

The technical specifications of the TM400CZ-H are foundational to its performance in high-power systems. The values presented below highlight the module's capacity for efficient and reliable operation. Each parameter is a critical piece of the puzzle for thermal design and performance modeling.

Parameter Value Engineering Significance
Collector-Emitter Voltage (VCES) 600V Provides the necessary voltage headroom for operation in standard industrial power systems with substantial safety margin.
Collector Current (IC) 400A This high current rating is a key indicator, enabling robust power delivery for high-torque motors and heavy industrial loads.
Collector-Emitter Saturation Voltage (VCE(sat)) Typ. 2.7V A critical value for efficiency. A lower VCE(sat) directly reduces conduction losses, minimizing heat generation and improving overall system efficiency.
Configuration Single IGBT Offers design flexibility for various inverter topologies, including chopper, boost, or phase-leg configurations.

 

Technical Deep Dive

A Closer Look at CSTBT™ for Sustained Performance

At the heart of the TM400CZ-H's performance is Mitsubishi's Carrier Stored Trench-Gate Bipolar Transistor (CSTBT™) technology. This design represents a significant evolution from earlier planar IGBT structures. Its primary engineering achievement is the reduction of the VCE(sat) without a proportional increase in switching losses, tackling a classic trade-off in power semiconductor design.

The CSTBT™ structure incorporates a unique carrier-stored layer near the collector side. This layer acts like a temporary reservoir for charge carriers (holes) during the 'on' state. Think of it like a pre-filled staging area next to a highway on-ramp. When the gate signal allows conduction, this abundance of available carriers drastically lowers the resistance of the device, leading to a lower on-state voltage drop. This mechanism is key to minimizing power dissipated as heat, a crucial factor in ensuring IGBT reliability under continuous high-current conditions. For system designers, this translates directly to lower heatsink requirements and improved power density.

Frequently Asked Questions (FAQ)

What is the primary advantage of the H-Series classification for the TM400CZ-H?

The H-Series signifies that the TM400CZ-H is a 3rd generation Mitsubishi IGBT module. While not the latest technology, it represents a mature and widely deployed platform known for its robustness and predictable performance in demanding industrial applications, making it a reliable choice for long-life equipment.

How does the VCE(sat) of 2.7V impact the thermal design of a power converter?

A VCE(sat) of 2.7V at a rated current of 400A means the module will dissipate approximately 1080W as heat during conduction (P = V * I). This value is a critical input for thermal simulations and heatsink selection. The lower this value, the less heat is generated, allowing for a smaller, lighter, and more cost-effective cooling solution to maintain the junction temperature within its Safe Operating Area (SOA).

Is the TM400CZ-H suitable for high-frequency switching applications?

As a 3rd generation IGBT, the TM400CZ-H is optimized for low-to-medium frequency applications, typically found in motor drives and UPS systems (up to ~20 kHz). While its switching losses are controlled, for applications requiring higher frequencies (above 20-30 kHz), designers might explore newer generation IGBTs like Mitsubishi's 7th Gen IGBT, which are specifically engineered to minimize switching losses (Eon/Eoff) at higher speeds.

What does the 'Single IGBT' configuration imply for circuit design?

The single IGBT configuration provides maximum flexibility. It means the module contains one IGBT switch. Designers can use these modules individually for applications like DC chopper circuits or combine them in pairs to create half-bridge legs for 3-phase inverters. This modular approach allows for customized and scalable power stage design.

From a strategic standpoint, integrating a proven component like the TM400CZ-H into a new system design can de-risk the development process. Its established performance record and well-understood characteristics minimize unforeseen integration challenges, allowing engineering teams to focus on system-level innovation rather than debugging fundamental power stage behavior. This makes it an intelligent choice for projects where time-to-market and long-term field reliability are primary business drivers.

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