#IXYS, #VWI35_06P1, #IGBT_Module, #IGBT, VWI35-06P1 Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, ECOPAC-19; VWI35-06P1
Manufacturer Part Number: VWI35-06P1Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X19Pin Count: 19Manufacturer: IXYS CorporationRisk Rank: 5.71Case Connection: ISOLATEDCollector Current-Max (IC): 31 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X19Number of Elements: 6Number of Terminals: 19Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, ECOPAC-19