Fuji 2MBI100N-060 IGBT Module

Fuji 2MBI100N-060 is a high power insulated-gate bipolar transistor (IGBT) module designed for use in power electronics applications.

The 2MBI100N-060 module features voltage rating 600 volts & current rating 100 amps, suitable for use in high-power applications such as motor drives, power supplies, and welding equipment.

2MBI100N-060 has compact & rugged design that allows for easy installation and reliable operation in harsh environments.

Fuji 2MBI100N-060 IGBT module features built-in over-current protection and over-temperature protection, which help to ensure safe and stable operation.

2MBI100N-060 Features

• Square RBSOA

• Low Saturation Voltage

• Less Total Power Dissipation

• Improved FWD Characteristic

• Minimized Internal Stray Inductance

• Overcurrent Limiting Function (~3 Times Rated Current)

Applications

• High Power Switching

• A.C. Motor Controls

• D.C. Motor Controls

• Uninterruptible Power Supply

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=80°C :100A

Collector current Icp 1ms Tc=80°C :200A

Collector power dissipation Pc:400W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m

Reverse Recovery Time trr IF=100A 300 ns

Diode Forward On-Voltage VF IF=100A VGE=0V 3.0 V