1MBI2400VD-170E | 1700V 2400A IGBT for High-Efficiency Inverters
The Fuji Electric 1MBI2400VD-170E IGBT module offers elite-level efficiency for megawatt-scale systems by leveraging advanced V-Series chip technology to minimize energy waste. With core specifications of 1700V | 2400A | Vce(sat) 1.85V (typ), this device provides the key benefits of lowered energy losses and simplified thermal engineering. For engineers asking how to reduce collector-emitter saturation voltage in high-power inverters, the answer lies in utilizing advanced semiconductor structures like the V-Series, which are fundamentally optimized for lower on-state voltage drop even at extreme currents.
Data-Backed Assessment: 1MBI2400VD-170E Performance Metrics
In high-power system design, component selection is a data-driven process. The 1MBi2400VD-170E is a single-switch module engineered for maximum current handling in a single package. For context, its performance attributes, particularly its low on-state voltage and robust thermal characteristics, are central to its value. When evaluating components for a new design or an upgrade, comparing these key metrics against alternative solutions provides a clear engineering baseline for calculating system efficiency and thermal management requirements.
For systems requiring a different topology, such as a half-bridge configuration, the related {"0":"2MBI1400VXB-170E-50","1":"https://www.slw-ele.com/2mbi1400vxb-170e-50.html"} offers a dual-IGBT setup within the same 1700V class, providing design flexibility for different inverter architectures.
Core Specifications Driving Inverter Efficiency
The performance of the 1MBI2400VD-170E is defined by its electrical and thermal characteristics, which are optimized for high-current operation. A thorough review of these parameters is the first step in system-level simulation and design. For a comprehensive understanding of all operational limits and behaviors, Download the Datasheet.
Parameter Interpretation
- Collector-Emitter Saturation Voltage (VCE(sat)): Think of Vce(sat) as the 'toll' the current must pay to pass through the switch when it's on. The 1MBI2400VD-170E specifies a very low typical VCE(sat) of 1.85V at its nominal 2400A current (at Tj=25°C), rising to 2.45V at a junction temperature of 150°C. This low 'toll' directly translates to reduced conduction losses, which is a major source of waste heat in high-current inverters. What is the key benefit of the V-Series technology? Significantly lower Vce(sat) and switching losses.
- Switching Losses (Eon & Eoff): These values represent the energy lost each time the IGBT turns on and off. For the 1MBI2400VD-170E, the total switching energy (Ets) is specified as 610 mJ under nominal test conditions. Minimizing this value is critical in applications with higher switching frequencies, as it directly impacts overall converter efficiency and the required capacity of the cooling system.
| Category | Parameter | Value |
|---|---|---|
| Maximum Ratings (at Tc=25°C unless otherwise specified) | Collector-Emitter Voltage (VCES) | 1700 V |
| Continuous Collector Current (Ic at Tc=100°C) | 2400 A | |
| Pulsed Collector Current (Icp, 1ms) | 4800 A | |
| Max Junction Temperature (Tj max) | 175 °C | |
| Electrical Characteristics (at Tj=150°C) | Collector-Emitter Saturation Voltage (VCE(sat)) at 2400A, 15VGE | 2.45 V (typ.) |
| Forward Voltage of FWD (VF) at 2400A | 2.20 V (typ.) | |
| Gate-Emitter Threshold Voltage (VGE(th)) | 6.5 V (typ.) | |
| Thermal Characteristics | Thermal Resistance, Junction to Case (Rth(j-c)) - IGBT | 0.0075 °C/W |
| Thermal Resistance, Junction to Case (Rth(j-c)) - FWD | 0.0130 °C/W |
The V-Series Advantage in Renewables and Industrial Drives
The global push towards sustainable energy and higher industrial automation efficiency places immense pressure on power electronics. In sectors like wind power and heavy manufacturing, operational expenditure (OPEX) is heavily influenced by energy consumption. The Fuji Electric 1MBI2400VD-170E addresses this directly by employing Fuji Electric's V-Series chip technology, which is engineered to lower power losses during operation. For large-scale renewable projects, such as multi-megawatt wind turbines, even a fractional improvement in inverter efficiency compounds into significant financial savings and increased energy output over the system's lifespan. This focus on loss reduction makes the module a strategic component for systems where efficiency is a primary design driver. For a deeper understanding of the IGBT's role in this context, explore our guide on IGBTs at the heart of wind-to-grid conversion.
Where Low-Loss Switching Delivers Tangible Value
The design attributes of the Fuji Electric 1MBI2400VD-170E make it particularly suitable for applications where high current and high efficiency are paramount. Its robust single-switch topology simplifies busbar design in high-current choppers or as a building block in phase-leg configurations for very large inverters.
- Wind Turbine Inverters: The module's 2400A rating and 1700V breakdown voltage are ideal for the multi-megawatt converters found in modern wind turbines, enabling efficient conversion from the generator's variable output to grid-compatible AC power.
- Large-Scale Solar Farms: In utility-scale photovoltaic installations, central inverters must process immense DC power with minimal losses. The low Vce(sat) of this module helps maximize the energy harvested and delivered to the grid.
- Heavy Industrial Motor Drives: Drives for large pumps, compressors, and mills in industries like mining or marine propulsion demand both high power and extreme reliability. The thermal efficiency of this module supports robust designs capable of sustained operation under heavy loads. Proper analysis of potential failure modes is critical in these systems, as detailed in our article on IGBT failure analysis.
For multi-megawatt VFDs and renewable inverters where minimizing Vce(sat) at 2400A is paramount, the 1MBI2400VD-170E presents a clear path to higher system efficiency.
A Closer Look at the V-Series IGBT and FWD Technology
What is the continuous collector current? This module is rated for 2400 amperes at a case temperature of 100°C. This high current capability is achieved through a combination of advanced chip technology and package design. The V-Series IGBT chip utilizes a trench-gate structure and optimized wafer thickness to reduce on-state resistance, thereby lowering the Vce(sat). This not only improves electrical efficiency but also lessens the thermal burden on the module. Complementing the IGBT is an optimized Free-Wheeling Diode (FWD) designed for soft recovery characteristics. This reduces voltage overshoots and oscillations during switching, which contributes to lower EMI and improved reliability of the entire system. The module's low internal inductance design further aids in achieving clean, fast switching, a key aspect engineers can learn more about by decoding IGBT datasheets.
To further evaluate the suitability of the 1MBi2400VD-170E for your high-power design, it is recommended to download the complete datasheet and consult the thermal performance curves and Safe Operating Area (SOA) graphs to ensure robust and reliable operation within your specific application parameters.
