The 2MBI100U4A-120-50 is a N-channel IGBT Array and Module Transistor 1200V collector-emitter voltage and 540W collector power dissipation.
±20V Gate-emitter voltage
2500VAC Isolation voltage
Fuji 2MBI100U4A-120 New The 2MBI100U4A-120-50 is a N-channel IGBT Array and Module Transistor 1200V collector-emitter voltage and 540W collector power dissipation., 2MBI100U4A-120 pictures, 2MBI100U4A-120 price, 2MBI100U4A-120 supplier
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2MBI100U4A-120-50
Transistor Polarity: N Channel
DC Collector Current: 150A
Collector Emitter Saturation Voltage Vce(on): 2.2V
Power Dissipation Pd: 540W
Collector Emitter Voltage V(br)ceo: 1.2kV
Transistor Case Style: Module No. of Pins: 7Pins
Operating Temperature Max: 125°C
Product Range: -
SVHC: To Be Advised
The 2MBI100U4A-120-50 is a N-channel IGBT Array and Module Transistor 1200V collector-emitter voltage and 540W collector power dissipation.
Shunlongwei Inspected every 2MBI100U4A-120 before Ship, All 2MBI100U4A-120 with 6 months warranty.
