2MBI200S-120 Fuji Electric 1200V 200A Dual IGBT Module

2MBI200S-120 IGBT Module In-stock / Fuji Electric: 1200V 200A high-speed switching. 90-day warranty, AC motor control. Global fast shipping. Check stock online.

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· Manufacturer: Fuji Electric
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Content last revised on April 14, 2026

Fuji 2MBI200S-120: Engineering Analysis of a 1200V Dual IGBT Module

Introduction: Core Specifications and Engineering Value

The Fuji Electric 2MBI200S-120 is a dual IGBT module engineered for high-efficiency power conversion, delivering a robust balance of low conduction losses and reliable switching performance. With core specifications of 1200V | 200A | VCE(sat) of 2.7V (typ), this module provides two critical engineering benefits: reduced thermal load and enhanced system reliability. It directly addresses the challenge of managing power density in medium-power inverters by minimizing heat generation at the source. For systems around 50-100kW requiring a dependable and thermally efficient half-bridge solution, the 2MBI200S-120's low saturation voltage makes it an excellent design choice.

Key Parameter Overview

Decoding the Specs for Enhanced Switching Efficiency

The technical specifications of the 2MBI200S-120 are foundational to its performance in demanding power conversion applications. The following table highlights key parameters from the official datasheet, paired with their direct engineering implications. This "Specification + Value" format is designed to help engineers quickly assess the module's suitability for their design challenges.

Parameter Specification Engineering Value & Interpretation
Collector-Emitter Voltage (Vces) 1200V Provides substantial voltage margin for applications on 400V to 575V AC lines, ensuring reliability against transient voltage spikes common in industrial environments.
Continuous Collector Current (Ic) 200A (at Tc=80°C) Enables high power throughput, suitable for motor drives up to ~100kW and similarly rated inverters. The high current rating provides headroom for managing peak operational loads.
Collector-Emitter Saturation Voltage (VCE(sat)) 2.7V (Typical, at Ic=200A) This is a critical efficiency metric. A low VCE(sat) directly translates to lower conduction losses (P = VCE(sat) * Ic). Think of it as electrical friction; lower friction means less heat is generated during operation, simplifying thermal management.
Total Power Dissipation (Pc) 1300W Defines the module's capacity to dissipate heat. This high value, combined with a low VCE(sat), indicates a robust thermal design capable of sustaining high power loads without overheating.
Isolation Voltage (Viso) 2500V (AC, 1 minute) Guarantees high electrical isolation between the power circuit and the mounting baseplate, a critical safety requirement for protecting control electronics and ensuring operator safety in accordance with standards like IEC 61800-5-1.
Internal Circuit 2-in-1 (Half-Bridge) Simplifies system design by integrating two IGBTs in a standard half-bridge configuration. This reduces component count and streamlines the layout of the main power path and busbars in a three-phase inverter.

Download the 2MBI200S-120 datasheet for detailed specifications and performance curves.

Application Scenarios & Value

System-Level Benefits in Motor Drives and Power Inverters

The 2MBI200S-120 is optimally suited for medium-power applications where efficiency and reliability are paramount. Its feature set provides tangible value in several key areas:

  • Variable Frequency Drives (VFDs): In a typical VFD controlling a 75kW industrial motor, minimizing heat within the drive cabinet is a primary engineering challenge. The module's low VCE(sat) of 2.7V directly reduces conduction losses, a major source of waste heat. This allows for the use of smaller, more cost-effective heatsinks and can improve the overall reliability of the VFD by lowering internal operating temperatures.
  • Uninterruptible Power Supplies (UPS): For online double-conversion UPS systems, efficiency is critical to reducing operating costs (TCO). The 2MBI200S-120's balance of low conduction and switching losses contributes to higher overall AC-AC efficiency, ensuring less energy is wasted during both charging and inverter operation.
  • Solar and Wind Inverters: In grid-tied renewable energy systems, every percentage point of efficiency translates to greater energy yield. The NPT-IGBT technology in this module helps maximize the power harvested from solar panels or wind turbines by minimizing the energy lost during the DC-to-AC conversion process.

While the 2MBI200S-120 offers a strong performance profile, for systems requiring higher current handling or different package configurations, designers may also evaluate components like the 2MBI300S-120, which provides a higher current rating within a similar product family.

Technical Deep Dive

Anatomy of the NPT-IGBT and its Impact on Performance

The 2MBI200S-120 utilizes Non-Punch-Through (NPT) IGBT technology. Unlike older Punch-Through (PT) designs, NPT devices feature a thicker, more lightly doped n-drift region. This structural difference has profound implications for engineers. The key advantage is a positive temperature coefficient for VCE(sat). This means that as the IGBT heats up, its on-state voltage increases slightly. This seemingly counterintuitive trait is highly beneficial for paralleling modules. If one module starts to carry more current and heats up, its increased VCE(sat) naturally encourages current to redistribute to cooler, parallel devices, creating a self-balancing effect that prevents thermal runaway.

Furthermore, the NPT structure contributes to a wider Safe Operating Area (SOA) and improved short-circuit withstand capability. This inherent ruggedness provides an extra layer of security against fault conditions that can occur in industrial settings, such as a stalled motor or a short circuit in the output stage. The tradeoff for this reliability is typically slightly higher switching losses compared to the latest trench-gate field-stop technologies, making the 2MBI200S-120 particularly well-suited for applications operating in the lower to medium frequency range (up to ~15 kHz) where conduction losses are the dominant factor.

Frequently Asked Questions (FAQ)

What is the primary benefit of the 2.7V typical VCE(sat) in a real-world application?

The low VCE(sat) directly reduces the power lost as heat during conduction. In a 75kW motor drive operating at full load, this can mean a reduction of hundreds of watts in waste heat compared to an older generation IGBT, simplifying thermal design and improving overall system efficiency.

How does the 2-in-1 half-bridge configuration impact the design of a 3-phase inverter?

It significantly simplifies the mechanical layout. A designer can use three identical 2MBI200S-120 modules to construct a complete three-phase bridge. This symmetrical layout makes busbar design easier, helps equalize parasitic inductances between phases, and streamlines the assembly process.

Is a negative gate voltage required to fully turn off the 2MBI200S-120?

While the datasheet specifies characteristics with VGE = 0V for turn-off, using a small negative gate voltage (e.g., -5V to -15V) is a standard best practice in gate drive design. This provides a stronger turn-off, improving noise immunity and preventing accidental turn-on caused by high dv/dt, which enhances the reliability of the system, especially in noisy industrial environments.

What does the 'S' in the part number 2MBI200S-120 signify?

The 'S' typically indicates the generation or series of the IGBT module from the manufacturer. It differentiates this module from other variants that may have different chip technologies, internal layouts, or performance characteristics. Always refer to the official Fuji Electric documentation to decode specific part number conventions.

Given its power dissipation of 1300W, how do I begin heatsink selection for this module?

Start by calculating the total expected power loss (conduction + switching losses) for your specific operating conditions (current, duty cycle, frequency). Then, use the module's thermal resistance (Rth(j-c)) from the datasheet along with your maximum allowable junction temperature (e.g., 125°C) and maximum ambient temperature to determine the required thermal resistance of the heatsink. A lower required heatsink resistance means a larger or more efficient heatsink is needed.

An Engineer's Perspective on Application Fit

From an engineer's viewpoint, the 2MBI200S-120 represents a workhorse component for mainstream industrial power conversion. It doesn't aim for the lowest possible switching losses seen in the latest high-frequency designs but instead provides a highly reliable, thermally efficient, and cost-effective solution for applications dominated by conduction losses. Its inherent ruggedness, stemming from the NPT technology, and the simplicity of its half-bridge configuration make it a low-risk, proven choice for building robust motor drives, power supplies, and solar inverters where long-term operational stability is non-negotiable.

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