Content last revised on November 26, 2025
Fuji Electric 2MBI150NC-060-10: A Dual IGBT Module for High-Efficiency Power Conversion
The 2MBI150NC-060-10 is a high-performance dual IGBT module from Fuji Electric's N-Series, engineered to deliver exceptional efficiency in demanding power switching applications. With core specifications of 600V | 150A | VCE(sat) 1.95V (typ), this module provides significant engineering benefits, including reduced overall power dissipation and the capability for higher frequency operation. It directly addresses the need for compact and efficient power stages in modern industrial electronics. For designs targeting high efficiency in the 20-50 kHz range, this module's switching characteristics offer a distinct advantage.
Application Scenarios & Value
System-Level Gains in Motor Drives and UPS through Optimized Switching Performance
The 2MBI150NC-060-10 is engineered for applications where power density and efficiency are critical design drivers. Its primary value is realized in systems like AC and DC motor controllers, general-purpose inverters, and Uninterruptible Power Supply (UPS) units. Consider an engineer designing a compact Variable Frequency Drive (VFD) for an industrial automation line. The challenge is to maximize motor control precision while minimizing the physical footprint of the drive, which is often dictated by the size of the heatsink. The low collector-emitter saturation voltage (VCE(sat)) of this module directly translates to lower conduction losses during operation. This reduction in wasted heat allows for the use of a smaller, more cost-effective thermal management solution, enabling a higher overall power density for the VFD. The module's robust Safe Operating Area (SOA) further ensures reliability under demanding load conditions typical of motor startup and braking. For systems requiring operation at a higher voltage class, the 2MBI150NC-120 offers a 1200V alternative.
Key Parameter Overview
Analyzing Key Electrical and Thermal Ratings for Efficient Design
The performance of the 2MBI150NC-060-10 is defined by a set of critical parameters that directly influence system design. Below is a summary of the key specifications that engineers and procurement specialists should evaluate for their applications.
| Parameter | Value | Conditions |
|---|---|---|
| Collector-Emitter Voltage (VCES) | 600V | Tj = 25°C |
| Continuous Collector Current (IC) | 150A | Tc = 80°C |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.95V (Typ.) / 2.30V (Max.) | IC = 150A, VGE = 15V, Tj = 25°C |
| Gate-Emitter Threshold Voltage (VGE(th)) | 5.5V (Typ.) | VCE = 20V, IC = 150mA |
| Turn-on Time (ton) | 0.6 µs (Typ.) | IC = 150A, VCC = 300V |
| Turn-off Time (toff) | 0.6 µs (Typ.) | IC = 150A, VCC = 300V |
| Thermal Resistance (Rth(j-c)) | 0.21 °C/W (Max., per IGBT) | Junction to Case |
| Maximum Power Dissipation (PC) | 600W | Tc = 25°C |
Note: The parameters listed above are highlights. For comprehensive details, performance curves, and application notes, it is essential to consult the official documentation.
Frequently Asked Questions (FAQ)
Engineering Inquiries on Performance and Application
How does the VCE(sat) of 1.95V impact the thermal design of a power inverter?
A lower VCE(sat) directly reduces conduction power loss, which is a major source of heat in an IGBT. Think of it like friction; less friction means less heat generated. For a 150A current, this lower voltage drop significantly cuts down on the watts dissipated as heat (Power Loss = VCE(sat) * IC). This allows engineers to specify smaller heatsinks or run the module at a lower junction temperature for the same heatsink, improving long-term reliability and enabling more compact system designs.
What is the significance of the N-Series technology in this IGBT module?
The N-Series from Fuji Electric is optimized to provide a balance between low saturation voltage and high-speed switching capabilities. This makes the 2MBI150NC-060-10 particularly suitable for applications that operate at higher switching frequencies to reduce the size of magnetic components like inductors and transformers, a key goal in modern power electronics design.
Is the 2MBI150NC-060-10 suitable for paralleling to achieve higher current output?
While the datasheet provides the necessary characteristics, successful IGBT Paralleling requires careful design considerations. Factors like gate drive layout symmetry, thermal balancing, and analysis of VCE(sat) and VGE(th) variation between modules are critical. Engineers should consult Fuji Electric's application notes on paralleling N-Series modules to ensure balanced current sharing and prevent thermal runaway.
For strategic integration into industrial power systems, the 2MBI150NC-060-10 offers a robust foundation built on proven technology. Its electrical and thermal characteristics are tailored to support the ongoing industry trend towards higher power density and greater energy efficiency, providing a reliable building block for next-generation inverters and motor drives.
