2MBI200HH-120-50 Fuji Electric 1200V 200A High Speed IGBT Module

  • 2MBI200HH-120-50

2MBI200HH-120-50 IGBT Module In-stock / Fuji: 1200V 200A. Optimized for high-frequency switching and low loss. 90-day warranty. Request pricing now.

· Categories: IGBT
· Manufacturer: Fuji Electric
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 350
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Content last revised on June 15, 2026

High-Performance 1200V 200A Dual IGBT Module – Fuji Electric 2MBI200HH-120-50

Is your high-frequency power system struggling with thermal management due to excessive switching losses?

Optimizing Thermal Efficiency in High-Speed Hard-Switching Converters

The Fuji Electric 2MBI200HH-120-50 is a specialized dual IGBT module designed to bridge the gap between standard industrial switching and high-speed power conversion. While traditional modules often force a compromise between voltage endurance and switching frequency, this 1200V, 200A component is engineered specifically for "HH" (High-Speed) performance, making it a critical asset for engineers designing advanced induction heating and high-density power supplies.

Top Specs: 1200V | 200A | Vce(sat) 3.50V (typ) | Tj Max 150°C

  • Minimal Switching Loss: Drastically reduces Eoff to enable higher PWM frequencies.
  • Soft Recovery Diode: Minimizes EMI and voltage spikes during high-speed commutation.

What is the primary benefit of the "HH" designation in the 2MBI200HH-120-50? It provides significantly lower turn-off energy compared to standard 1200V modules, allowing for smaller passive components and higher system power density. For industrial power supplies prioritizing high-frequency efficiency over conduction loss, the 2MBI200HH-120-50 is the optimal choice.

Engineering FAQ

Solving Design Challenges for High-Frequency Power Stages

How does the switching speed of the 2MBI200HH-120-50 influence the selection of the gate driver?
Because this module is designed for high-speed operation, the gate driver must provide a high peak current to charge and discharge the Input Capacitance (Cies) rapidly. Engineers should prioritize drivers with a high dV/dt immunity to prevent parasitic turn-on, ensuring that the module’s low Switching Loss characteristics are fully realized in the final system design.

What is the trade-off between the Vce(sat) and switching frequency in this high-speed module?
The 2MBI200HH-120-50 features a Saturation Voltage (Vce(sat)) of approximately 3.50V. This is intentionally higher than standard modules to achieve a much faster turn-off time. In applications like Induction Heating or UPS systems operating above 20kHz, the reduction in switching losses far outweighs the slightly higher conduction losses, leading to a higher overall efficiency coefficient.

Does the insulated package design impact the thermal design for parallel module operation?
Yes. The 2MBI200HH-120-50 utilizes an internally insulated baseplate, providing a 2500V AC isolation. This simplifies the heatsink mounting process; however, because the module operates at high frequencies, engineers must be meticulous regarding the Thermal Resistance Case-to-Heatsink (Rth(c-f)), as high-frequency losses generate localized heat that requires efficient thermal dissipation paths.

Technical Specification Overview

Functional Spec Grouping for System Integration

Maximum Ratings (at Tc = 25°C unless otherwise specified)
Collector-Emitter Voltage (Vces) 1200V
Continuous Collector Current (Ic) 200A
Max. Power Dissipation (Pd) 1500W
Isolation Voltage (Viso) 2500V AC (1 min)

 

Electrical and Thermal Characteristics
Collector-Emitter Saturation Voltage (Vce(sat)) 3.50V (typ)
Gate-Emitter Threshold Voltage (Vge(th)) 4.5V to 8.5V
Turn-off Time (toff) 0.50µs (max)
Thermal Resistance Junction-to-Case (Rth(j-c)) 0.085°C/W (IGBT)

Download the 2MBI200HH-120-50 datasheet for detailed specifications and performance curves.

Industry Insights & Strategic Advantage

Future-Proofing High-Density Power Infrastructure

The global shift toward high-efficiency power electronics is driving a need for semiconductors that can operate at frequencies previously reserved for MOSFETs but at the power levels only an IGBT Module can sustain. The 2MBI200HH-120-50 represents a strategic choice for OEMs looking to comply with evolving energy efficiency standards, such as those found in Green Energy mandates.

By leveraging high-speed switching, this module reduces the size of transformers and inductors. Consider the analogy of a camera shutter: a faster shutter (high-speed IGBT) captures high-speed action (frequency) with less blur (energy loss). In a power stage, this translates to less waste heat and increased reliability. For systems requiring even higher integration, the 1MBI200HH-120L-50 or the 4th Gen 2MBI200U4H-120-50 provide alternative topologies within a similar thermal envelope. Understanding IGBT Selection Beyond Vcesat is critical for high-frequency designs where the dynamic losses dominate the total power budget.

Application Scenarios & Value

Precision Engineering in Harsh High-Frequency Environments

Engineers often face the "thermal runaway" challenge in Induction Heating systems where switching events occur thousands of times per second. In a 50kW Induction Furnace, using a standard IGBT would result in a massive cooling requirement. By utilizing the 2MBI200HH-120-50, the reduction in turn-off time significantly lowers the junction temperature, providing the necessary safety margin to prevent catastrophic failure during transient load changes.

In the context of Uninterruptible Power Supplies (UPS), the 2MBI200HH-120-50 contributes to a lower Total Cost of Ownership (TCO) by improving the double-conversion efficiency. The soft-recovery characteristics of the internal FWD (Free Wheeling Diode) also reduce the burden on the Snubber Circuit, further simplifying the PCB layout and reducing electromagnetic interference in sensitive medical or data center environments.

For designers working on multi-phase systems, the consistent electrical parameters of the 2MBI200HH-120-50 allow for easier IGBT Paralleling, ensuring balanced current sharing even under high dV/dt conditions. This level of technical predictability is why many tier-one manufacturers choose Fuji Electric for their most demanding power conversion platforms.

As a professional distributor, we provide the technical data necessary to empower your engineering decisions. Our focus is ensuring that the components you select, like the 2MBI200HH-120-50, align perfectly with your system's efficiency and reliability goals. For inquiries regarding current technical alternatives or system-level integration, contact our engineering support team.

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