FUJI 2DI150Z-100

2DI150Z-100 FUJI IGBT Power transistor module 150A/1000V/GTR/2U

· Categories: IGBT
· Manufacturer: FUJI
· Price: US$ 35
· Date Code: 2024+
. Available Qty: 277
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Content last revised on March 30, 2025

2DI150Z-100 Description

Features
High Voltage
Including free wheeling diode
Excellent safe operating area
Insulated type

Applications
High power switching
A.C Motor controls
D.C Motor controls
Uninterruptible Power supply

Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1000V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :150A
Collector current Icp 1ms Tc=25°C :300A
Collector power dissipation Pc:1000W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Weight Typical value 470g

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