Fuji Electric 2MBI200U4H-120 | High-Speed 1200V IGBT for Demanding Power Conversion
The Fuji Electric 2MBI200U4H-120 is an N-channel IGBT module engineered for engineers pushing the boundaries of efficiency and performance in high-frequency power systems. As a cornerstone of Fuji's U4-Series, this half-bridge module integrates advanced silicon technology into a robust package, delivering a precise balance of low switching loss, minimal conduction loss, and exceptional durability.
- Voltage and Current Rating: 1200V / 200A, providing substantial headroom for industrial-grade applications.
- Core Technology: Features Fuji’s 4th Generation Trench Gate Field-Stop (U4) technology, optimized for high-speed operation.
- Topology: 2-in-1 (half-bridge) configuration simplifies inverter and chopper circuit designs.
- Key Advantage: Low turn-on (Eon) and turn-off (Eoff) energy minimizes switching losses, enabling higher operating frequencies and improved thermal performance.
Key Parameter Overview
The following specifications are critical for system-level design and thermal modeling. They underscore the module's suitability for high-performance applications where both static and dynamic losses must be carefully managed.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vces) | 1200 V |
| Continuous Collector Current (Ic) @ Tc=80°C | 200 A |
| Collector-Emitter Saturation Voltage (Vce(sat)) @ Ic=200A, Tj=125°C | 2.70 V (Typ.) |
| Turn-On Switching Loss (Eon) @ Tj=125°C | 22.0 mJ (Typ.) |
| Turn-Off Switching Loss (Eoff) @ Tj=125°C | 21.0 mJ (Typ.) |
| Thermal Resistance, Junction to Case (Rth(j-c)) per IGBT | 0.16 °C/W (Max) |
| Short-Circuit Withstand Time (tsc) | ≥ 10 µs |
For a comprehensive list of all electrical and thermal characteristics, you can download the complete 2MBI200U4H-120 datasheet.
Engineering Breakdown: 4th Gen Trench Gate and High-Speed Performance
The performance of the 2MBI200U4H-120 is rooted in its silicon design. Fuji's 4th Generation technology employs a Trench Gate structure combined with a Field-Stop (FS) layer. This sophisticated architecture offers two distinct engineering advantages. The trench gate design optimizes the on-state by creating a highly efficient channel for current flow, which helps keep the VCE(sat) competitive. Concurrently, the FS layer allows for a significantly thinner drift region, which is fundamental to reducing switching losses, particularly turn-off energy (Eoff).
The "H" suffix in the model name specifically designates its optimization for high-speed switching. By carefully tuning the carrier lifetime within the silicon, Fuji engineers have minimized the "tail current" during the turn-off phase. This directly reduces Eoff, making the Fuji Electric 2MBI200U4H-120 an ideal choice for systems operating at higher PWM frequencies (typically >15 kHz). In such applications, switching losses become the dominant factor in total energy loss, and this module's design ensures the power conversion stage remains highly efficient.
Application Sweet Spots: Where the 2MBI200U4H-120 Excels
This module's unique characteristics make it a superior choice in specific, demanding fields:
- High-Frequency Welding & Induction Heating: In these applications, higher operating frequencies translate to smaller, lighter magnetic components and more precise energy delivery. The low switching losses of the 2MBI200U4H-120 are critical to preventing thermal runaway and maximizing the efficiency of the power source. Explore more on the role of IGBTs in high-frequency induction heating.
- Solar Inverters & UPS: Maximizing watt-hour efficiency is the primary goal. The balanced profile of this IGBT module—combining reasonable conduction losses with excellent switching performance—ensures minimal energy is wasted during the DC/AC conversion process. This leads to greater energy harvest in photovoltaic systems and longer runtime in uninterruptible power supplies.
- High-Performance Motor Drives: For applications like CNC spindles and robotic servo drives, high PWM frequencies enable lower torque ripple, reduced audible noise, and faster dynamic response. The clean, fast switching of the 2MBI200U4H-120 facilitates the high-fidelity current control necessary for such precision motion systems.
Engineer's FAQ for the 2MBI200U4H-120
Here are expert answers to common design questions regarding this module.
