FUJI 6MBI100U4B-120

  • 6MBI100U4B-120

6MBI100U4B-120 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-35; 6MBI100U4B-120

· Categories: IGBT
· Manufacturer: FUJI
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Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 55
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Content last revised on May 18, 2023

Manufacturer Part Number: 6MBI100U4B-120Part Life Cycle Code: ActiveIhs Manufacturer: FUJI ELECTRIC CO LTDPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X35Pin Count: 35Manufacturer: Fuji Electric Co LtdRisk Rank: 5.73Case Connection: ISOLATEDCollector Current-Max (IC): 150 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORJESD-30 Code: R-XUFM-X35Number of Elements: 6Number of Terminals: 35Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 410 nsTurn-on Time-Nom (ton): 320 ns Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

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