6MBI225U-170 Fuji Electric 1700V 225A 6-Pack IGBT Module

6MBI225U-170 IGBT Module from Fuji Electric: 1700V 225A for high-efficiency power conversion. 90-day warranty. Ideal for solar inverters & AC drives. Get quote.

· Categories: IGBT
· Manufacturer: Fuji Electric
· Price: US$
· Date Code: 2018+
. Available Qty: 26
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Content last revised on November 22, 2025

The Fuji Electric 6MBI225U-170: Engineering High-Voltage Power Conversion

Optimizing Efficiency in Demanding High-Voltage Inverter and Drive Applications

The Fuji Electric 6MBI225U-170 is a 6-pack IGBT module engineered for high-efficiency power conversion in demanding, high-voltage industrial systems. With core specifications of 1700V and 225A, this U-Series module provides a robust solution for minimizing switching losses and improving thermal performance. Its design focuses on delivering high-speed switching and voltage-driven operation, directly addressing the challenge of maintaining reliability in applications such as 690V AC motor drives and 1000V-class solar inverters. For systems demanding higher current capacity within the same voltage class, the related 6MBI450UM-170 offers an increased current rating.

Key Parameter Overview

Decoding the Specs for Enhanced Switching Performance

The technical specifications of the 6MBI225U-170 are pivotal for system designers aiming to maximize efficiency and reliability. Each parameter is a critical piece of the puzzle in achieving optimal power stage performance.

Parameter Value Engineering Significance
Collector-Emitter Voltage (Vces) 1700V Provides the necessary voltage margin for reliable operation in systems with high DC bus voltages, such as 690V AC industrial drives or 1000V solar inverters, ensuring protection against voltage spikes.
Collector Current (Ic) 225A (at Tc=80°C) Defines the module's continuous current handling capability at a typical operating case temperature, crucial for sizing the inverter for specific motor or power generation applications.
Collector-Emitter Saturation Voltage (Vce(sat)) 3.0V (Typ, at Tj=125°C) A low Vce(sat) is analogous to low friction in a mechanical system. It directly reduces conduction losses, which are a major source of heat, thereby improving overall system efficiency and reducing heatsink requirements.
Collector Power Dissipation (Pc) 1040W (per device) Indicates the maximum amount of heat each IGBT chip can dissipate. This value is fundamental for thermal design and ensuring the junction temperature remains within the safe operating area.
Maximum Junction Temperature (Tj) 150°C Sets the upper thermal limit for the semiconductor. Operating well below this temperature is key to achieving long-term operational life and reliability.

Download the 6MBI225U-170 datasheet for detailed specifications and performance curves.

Application Scenarios & Value

Achieving System-Level Benefits in High-Voltage Power Conversion

The 6MBI225U-170 is particularly well-suited for applications where high voltage handling and switching efficiency are non-negotiable. Its robust 1700V rating provides a significant safety margin, making it a prime candidate for the next generation of renewable energy and industrial automation systems.

A high-fidelity engineering scenario for this module is in the power stage of a central solar inverter designed for a 1000V DC photovoltaic array. In this application, the primary challenge is to convert the high DC voltage to a grid-compliant AC voltage with minimal energy loss. The module's high-speed switching capability and low conduction losses (Vce(sat)) directly contribute to higher conversion efficiency. This translates into more marketable energy (kWh) from the solar array and a lower Levelized Cost of Energy (LCOE). The low inductance package design also helps mitigate voltage overshoots during fast switching events, a common problem in high-voltage inverters that can compromise device reliability. For designs that require a different internal configuration but similar voltage ratings, the dual IGBT 2MBI300U4H-170 presents an alternative topology.

Frequently Asked Questions

What is the primary benefit of the 1700V Vces rating?
The 1700V rating provides a substantial safety margin for inverters connected to a 690V AC line or a 1000V DC bus, ensuring robust performance and reliability against transient voltage spikes that are common in industrial and renewable energy environments.

How does the U-Series technology in the 6MBI225U-170 impact performance?
Fuji Electric's U-Series IGBTs are designed for high-speed switching and soft switching characteristics. This reduces turn-on and turn-off losses (Eon/Eoff), which is critical for improving efficiency, especially in applications operating at higher switching frequencies like servo drives and uninterruptible power supplies (UPS).

What does the "low inductance module structure" feature mean for my design?
A low internal inductance minimizes voltage overshoot and ringing during fast switching transitions. This reduces stress on the IGBTs, simplifies the snubber circuit design, and can improve the system's overall electromagnetic compatibility (EMC) performance.

Is this module suitable for paralleling to achieve higher current output?
While datasheets provide the fundamental characteristics, successful paralleling requires careful design considerations. Key factors include ensuring tight gate drive signal timing, symmetrical busbar layout for balanced current sharing, and managing thermal distribution. For specific guidance, referring to application notes on IGBT Paralleling is highly recommended.

What are the key considerations for the gate drive circuit for this 1700V module?
For a 1700V IGBT, a robust gate drive design is crucial. It typically requires a gate voltage of +15V for turn-on and a negative voltage (e.g., -15V) for a secure turn-off to prevent parasitic turn-on. The gate driver must also have a high common-mode transient immunity (CMTI) to withstand the high dV/dt present in high-voltage switching applications.

An Engineer's Perspective on Application

From a design engineering standpoint, the 6MBI225U-170 serves as a foundational building block for creating reliable high-power, high-voltage converters. Its specified characteristics allow for predictable performance modeling, enabling designers to optimize their thermal management strategies and gate drive circuits with confidence. The integration of six IGBTs into a single, low-inductance package simplifies the mechanical layout and assembly of a three-phase inverter bridge, ultimately contributing to a more compact and cost-effective system design. For a comprehensive understanding of IGBT selection, explore our guide on the core trio of IGBT module selection: voltage, current, and thermal management.

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