#FUJI, #7MBI50N_120, #IGBT_Module, #IGBT, 7MBI50N-120 Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, P607, 22 PIN; 7MBI50N-120
Manufacturer Part Number: 7MBI50N-120Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-XUFM-X22Pin Count: 22Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXJESD-30 Code: R-XUFM-X22Number of Elements: 7Number of Terminals: 22Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 400 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONVCEsat-Max: 3.3 V Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, P607, 22 PIN