#FUJI, #7MBR15NE120, #IGBT_Module, #IGBT, 7MBR15NE120 FUJI Insulated Gate Bipolar Transistor, 15A 1200V N-Channel
Features
· High Speed Switching
· Voltage Drive
· Low Inductance Module Structure
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :15A
Collector current Icp 1ms Tc=25°C :30A
Collector current Ic Continuous Tc=80°C :10A
Collector current Icp 1ms Tc=80°C :20A
Collector power dissipation Pc:88W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 1.3~1.7 N·m