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FUJI 7MBR15NE120

  • 7MBR15NE120
  • 7MBR15NE120 FUJI Insulated Gate Bipolar Transistor, 15A 1200V N-Channel

    · Categories: IGBT
    · Manufacturer: FUJI
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
    Submit RFQ to Get Price
    · Date Code: Please Verify on Quote
    . Available Qty: 164
    90-Day Warranty
    Global Shipping
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    Whatsapp: 0086 189 2465 1869

    Content last revised on December 18, 2024

    Features
    · High Speed Switching
    · Voltage Drive
    · Low Inductance Module Structure
    · Converter Diode Bridge Dynamic Brake Circuit
    Applications
    · Inverter for Motoe Drive
    · AC and DC Servo Drive Amplifier
    · Uninterruptible Power Supply
    Maximum ratings and characteristics
    .Absolute maximum ratings (Tc=25°C unless without specified)
    Collector-Emitter voltage Vces:1200V
    Gate-Emitter voltage VGES:±20V
    Collector current Ic Continuous Tc=25°C :15A
    Collector current Icp 1ms Tc=25°C :30A
    Collector current Ic Continuous Tc=80°C :10A
    Collector current Icp 1ms Tc=80°C :20A
    Collector power dissipation Pc:88W
    Isolation Voltage VIsol (AC 1 minute) :2500V
    Operating junction temperature Tj:+150°C
    Storage temperature Tstg :-40 to +125°C
    Mounting screw torque 1.3~1.7 N·m

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