#Microsemi Power Products Group, #ARF477FL, #IGBT_Module, #IGBT, ARF477FL RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semicond
Manufacturer Part Number: ARF477FLRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPackage Description: FLANGE MOUNT, R-CDFM-F8Pin Count: 8ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 2.21Case Connection: SOURCEConfiguration: COMMON SOURCE, 2 ELEMENTSDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 15 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: VERY HIGH FREQUENCY BANDJESD-30 Code: R-CDFM-F8Number of Elements: 2Number of Terminals: 8Operating Mode: DEPLETION MODEOperating Temperature-Max: 175 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTransistor Application: AMPLIFIERTransistor Element Material: SILICON RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-8