#EUPEC, #BSM200GAL120DN2, #IGBT_Module, #IGBT, BSM200GAL120DN2 Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES; BSM200GAL120DN2
Manufacturer Part Number: BSM200GAL120DN2Pbfree Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: ,Pin Count: 5Manufacturer: Infineon Technologies AGRisk Rank: 5.79Collector Current-Max (IC): 290 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Voltage-Max: 20 VNumber of Elements: 1Operating Temperature-Max: 150 °CPower Dissipation-Max (Abs): 1400 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 3 V Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES