#MITSUBISHI, #CM100E3U_12H, #IGBT_Module, #IGBT, CM100E3U-12H Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel; CM100E3U-12H
Manufacturer Part Number: CM100E3U-12HPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Powerex INCPackage Description: FLANGE MOUNT, R-XUFM-X5Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.21Case Connection: ISOLATEDCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X5Number of Elements: 1Number of Terminals: 5Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 400 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel