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MITSUBISHI CM100E3U-12H IGBT Module

#MITSUBISHI, #CM100E3U_12H, #IGBT_Module, #IGBT, CM100E3U-12H Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel; CM100E3U-12H

· Categories: IGBT Module
· Manufacturer: MITSUBISHI
· Price: US$
· Date Code: 11+
. Available Qty: 167
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CM100E3U-12H Specification

Sell CM100E3U-12H, #MITSUBISHI #CM100E3U-12H Stock, CM100E3U-12H Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel; CM100E3U-12H, #IGBT_Module, #IGBT, #CM100E3U_12H
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URL: https://www.slw-ele.com/cm100e3u-12h.html

Manufacturer Part Number: CM100E3U-12HPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Powerex INCPackage Description: FLANGE MOUNT, R-XUFM-X5Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.21Case Connection: ISOLATEDCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X5Number of Elements: 1Number of Terminals: 5Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 400 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel

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